Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reducti...

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Main Authors:	Mohd Khairi, Mohamad Azim, Ab Rahim, Rosminazuin, Saidin, Norazlina, Abdullah, Yusof, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	English English
Published:	Lembaga Penerbitan dan Publikasi Ilmiah (LPPI), Universitas Ahmad Dahlan 2019
Subjects:	QC Physics TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/72556/ http://irep.iium.edu.my/72556/ http://irep.iium.edu.my/72556/ http://irep.iium.edu.my/72556/1/72556_Silicon%20carbide%20schottky%20diodes%20forward.pdf http://irep.iium.edu.my/72556/7/72556_Silicon%20carbide%20schottky%20diodes%20forward%20and%20reverse%20current%20properties%20upon%20fast%20electron%20radiation_Scopus.pdf

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spelling	iium-725562019-11-24T13:19:34Z http://irep.iium.edu.my/72556/ Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation Mohd Khairi, Mohamad Azim Ab Rahim, Rosminazuin Saidin, Norazlina Abdullah, Yusof Hasbullah, Nurul Fadzlin QC Physics TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy \| saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation. Lembaga Penerbitan dan Publikasi Ilmiah (LPPI), Universitas Ahmad Dahlan 2019-06 Article PeerReviewed application/pdf en http://irep.iium.edu.my/72556/1/72556_Silicon%20carbide%20schottky%20diodes%20forward.pdf application/pdf en http://irep.iium.edu.my/72556/7/72556_Silicon%20carbide%20schottky%20diodes%20forward%20and%20reverse%20current%20properties%20upon%20fast%20electron%20radiation_Scopus.pdf Mohd Khairi, Mohamad Azim and Ab Rahim, Rosminazuin and Saidin, Norazlina and Abdullah, Yusof and Hasbullah, Nurul Fadzlin (2019) Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation. Bulletin of Electrical Engineering and Informatics, 8 (2). pp. 428-437. ISSN 2302-9285, http://journal.portalgaruda.org/index.php/EEI/article/view/1503 10.11591/eei.v8i2.1503
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	QC Physics TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	QC Physics TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Mohd Khairi, Mohamad Azim Ab Rahim, Rosminazuin Saidin, Norazlina Abdullah, Yusof Hasbullah, Nurul Fadzlin Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation
description	This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy \| saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation.
format	Article
author	Mohd Khairi, Mohamad Azim Ab Rahim, Rosminazuin Saidin, Norazlina Abdullah, Yusof Hasbullah, Nurul Fadzlin
author_facet	Mohd Khairi, Mohamad Azim Ab Rahim, Rosminazuin Saidin, Norazlina Abdullah, Yusof Hasbullah, Nurul Fadzlin
author_sort	Mohd Khairi, Mohamad Azim
title	Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation
title_short	Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation
title_full	Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation
title_fullStr	Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation
title_full_unstemmed	Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation
title_sort	silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation
publisher	Lembaga Penerbitan dan Publikasi Ilmiah (LPPI), Universitas Ahmad Dahlan
publishDate	2019
url	http://irep.iium.edu.my/72556/ http://irep.iium.edu.my/72556/ http://irep.iium.edu.my/72556/ http://irep.iium.edu.my/72556/1/72556_Silicon%20carbide%20schottky%20diodes%20forward.pdf http://irep.iium.edu.my/72556/7/72556_Silicon%20carbide%20schottky%20diodes%20forward%20and%20reverse%20current%20properties%20upon%20fast%20electron%20radiation_Scopus.pdf
first_indexed	2023-09-18T21:42:48Z
last_indexed	2023-09-18T21:42:48Z
_version_	1777413252063428608

Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

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