Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation
This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reducti...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
Lembaga Penerbitan dan Publikasi Ilmiah (LPPI), Universitas Ahmad Dahlan
2019
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/72556/ http://irep.iium.edu.my/72556/ http://irep.iium.edu.my/72556/ http://irep.iium.edu.my/72556/1/72556_Silicon%20carbide%20schottky%20diodes%20forward.pdf http://irep.iium.edu.my/72556/7/72556_Silicon%20carbide%20schottky%20diodes%20forward%20and%20reverse%20current%20properties%20upon%20fast%20electron%20radiation_Scopus.pdf |