Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature
Thermal dependence experiments have been carried out on silicon carbide Schottky power diodes. The devices were exposed to 3 MeV electrons with 10 MGy dose. Current density-voltage (~300 K to ~490 K) characterization have been used for the investigation. The results show that, at the highest tested...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Inderscience Enterprises Ltd.
2019
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/72560/ http://irep.iium.edu.my/72560/ http://irep.iium.edu.my/72560/1/Editor%20final%20ver._Response%20of%20Electron-Irradiated%20Silicon%20Carbide%20Schottky%20Power%20Diodes%20at%20Elevated%20Temperature.pdf |