The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forwa...

Full description

Bibliographic Details
Main Authors: Ganiyev, Sabuhi, Khairi, Mohammad Azim, Ahmad Fauzi, Dhiyauddin, Abdullah, Yusof, Hasbullah, Nurul Fadzlin
Format: Article
Language:English
English
English
Published: Maik Nauka-Interperiodica Publishing 2017
Subjects:
Online Access:http://irep.iium.edu.my/63086/
http://irep.iium.edu.my/63086/
http://irep.iium.edu.my/63086/
http://irep.iium.edu.my/63086/2/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal%20_scopus.pdf
http://irep.iium.edu.my/63086/13/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal%20_MYRA.pdf
http://irep.iium.edu.my/63086/19/63086_The%20effects%20of%20electron%20irradiation%20and%20thermal.pdf