Growth of gallium nitride thin film with the aid of polymethyl methacrylate

Wurtzite structure gallium nitride (GaN) thin film was grown on a c-plane sapphire (0001) substrate through spin coating method followed by nitridation process. Readily available and cheap gallium (III) nitrate hydrate (Ga(NO3)3·xH2O) powder was used as the gallium source. Besides that, ethanol-base...

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Main Authors:	C.Y., Fong, S.S., Ng, F.K., Yam, Abu Hassan, H., Hassan, Z.
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2014
Online Access:	http://journalarticle.ukm.my/8156/ http://journalarticle.ukm.my/8156/ http://journalarticle.ukm.my/8156/1/17_C.Y._Fong.pdf

id	ukm-8156
recordtype	eprints
spelling	ukm-81562016-12-14T06:46:23Z http://journalarticle.ukm.my/8156/ Growth of gallium nitride thin film with the aid of polymethyl methacrylate C.Y., Fong S.S., Ng F.K., Yam Abu Hassan, H. Hassan, Z. Wurtzite structure gallium nitride (GaN) thin film was grown on a c-plane sapphire (0001) substrate through spin coating method followed by nitridation process. Readily available and cheap gallium (III) nitrate hydrate (Ga(NO3)3·xH2O) powder was used as the gallium source. Besides that, ethanol-based precursor solution which has better wetting properties and fast evaporation rate was prepared. In addition, a thin layer of polymethyl methacrylate was introduced as a bonding adhesive layer for the growth of the GaN thin film. X-ray diffraction results indicated that the deposited film consists of nanocrystallite GaN with hexagonal wurtzite structure. Field-emission scanning electron microscopy showed the morphologies of the small and well-defined spherical grains that coated on the substrate. The synthesized GaN thin film demonstrated a pronounced and broad exciton peak at 380 nm in Photoluminescence spectrum. Raman scattering measurements showed two features that correspond to the E2 (high) and A1 (LO) phonon modes of the hexagonal GaN. Universiti Kebangsaan Malaysia 2014-12 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/8156/1/17_C.Y._Fong.pdf C.Y., Fong and S.S., Ng and F.K., Yam and Abu Hassan, H. and Hassan, Z. (2014) Growth of gallium nitride thin film with the aid of polymethyl methacrylate. Sains Malaysiana, 43 (12). pp. 1943-1949. ISSN 0126-6039 http://www.ukm.my/jsm/
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	Wurtzite structure gallium nitride (GaN) thin film was grown on a c-plane sapphire (0001) substrate through spin coating method followed by nitridation process. Readily available and cheap gallium (III) nitrate hydrate (Ga(NO3)3·xH2O) powder was used as the gallium source. Besides that, ethanol-based precursor solution which has better wetting properties and fast evaporation rate was prepared. In addition, a thin layer of polymethyl methacrylate was introduced as a bonding adhesive layer for the growth of the GaN thin film. X-ray diffraction results indicated that the deposited film consists of nanocrystallite GaN with hexagonal wurtzite structure. Field-emission scanning electron microscopy showed the morphologies of the small and well-defined spherical grains that coated on the substrate. The synthesized GaN thin film demonstrated a pronounced and broad exciton peak at 380 nm in Photoluminescence spectrum. Raman scattering measurements showed two features that correspond to the E2 (high) and A1 (LO) phonon modes of the hexagonal GaN.
format	Article
author	C.Y., Fong S.S., Ng F.K., Yam Abu Hassan, H. Hassan, Z.
spellingShingle	C.Y., Fong S.S., Ng F.K., Yam Abu Hassan, H. Hassan, Z. Growth of gallium nitride thin film with the aid of polymethyl methacrylate
author_facet	C.Y., Fong S.S., Ng F.K., Yam Abu Hassan, H. Hassan, Z.
author_sort	C.Y., Fong
title	Growth of gallium nitride thin film with the aid of polymethyl methacrylate
title_short	Growth of gallium nitride thin film with the aid of polymethyl methacrylate
title_full	Growth of gallium nitride thin film with the aid of polymethyl methacrylate
title_fullStr	Growth of gallium nitride thin film with the aid of polymethyl methacrylate
title_full_unstemmed	Growth of gallium nitride thin film with the aid of polymethyl methacrylate
title_sort	growth of gallium nitride thin film with the aid of polymethyl methacrylate
publisher	Universiti Kebangsaan Malaysia
publishDate	2014
url	http://journalarticle.ukm.my/8156/ http://journalarticle.ukm.my/8156/ http://journalarticle.ukm.my/8156/1/17_C.Y._Fong.pdf
first_indexed	2023-09-18T19:51:38Z
last_indexed	2023-09-18T19:51:38Z
_version_	1777406258597330944

Growth of gallium nitride thin film with the aid of polymethyl methacrylate

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