Ohmic contact formation of gallium nitride and electrical properties improvement

Ohmic contact formation of gallium nitride and electrical properties improvement

In this chapter, in order to improve the electrical conduction of Mg-doped p-type GaN contacts, enhancement of hydrogen release from GaN substrates is attempted. The electrical conduction profiles of the p-type GaN/Ni contact annealed at 573 K and 673 K for 3600 s while subjected to current flow sho...

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Bibliographic Details
Main Author: Aiman, Mohd Halil
Format: Thesis
Language:English
English
English
Published: 2016
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/16957/
http://umpir.ump.edu.my/id/eprint/16957/
http://umpir.ump.edu.my/id/eprint/16957/1/Ohmic%20Contact%20Formation%20of%20Gallium%20Nitride%20and%20Electrical%20Properties%20Improvement%20-%20table%20of%20content.pdf
http://umpir.ump.edu.my/id/eprint/16957/7/Ohmic%20Contact%20Formation%20of%20Gallium%20Nitride%20and%20Electrical%20Properties%20Improvement%20-%20abstract.pdf
http://umpir.ump.edu.my/id/eprint/16957/13/Ohmic%20Contact%20Formation%20of%20Gallium%20Nitride%20and%20Electrical%20Properties%20Improvement%20-%20references.pdf

Internet

http://umpir.ump.edu.my/id/eprint/16957/
http://umpir.ump.edu.my/id/eprint/16957/
http://umpir.ump.edu.my/id/eprint/16957/1/Ohmic%20Contact%20Formation%20of%20Gallium%20Nitride%20and%20Electrical%20Properties%20Improvement%20-%20table%20of%20content.pdf
http://umpir.ump.edu.my/id/eprint/16957/7/Ohmic%20Contact%20Formation%20of%20Gallium%20Nitride%20and%20Electrical%20Properties%20Improvement%20-%20abstract.pdf
http://umpir.ump.edu.my/id/eprint/16957/13/Ohmic%20Contact%20Formation%20of%20Gallium%20Nitride%20and%20Electrical%20Properties%20Improvement%20-%20references.pdf

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