Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor

Nowadays, CMOS Active Pixel Sensors (APS) are widely used especially in space mission. However, the space consists of various kind of radiation. Single-Event Transient (SET) is one of the concern for the circuits in the radiation environment. SETs are becoming a common phenomenon with technology...

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Main Authors:	Ahamad Sukor, Masturah, Hasbullah, Nurul Fadzlin, Ibrahim, Siti Noorjannah
Format:	Conference or Workshop Item
Language:	English
Published:	Penerbit UMT, Universiti Malaysia Terengganu (UMT) 2016
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/53222/ http://irep.iium.edu.my/53222/ http://irep.iium.edu.my/53222/1/53222_Single-event%20transient%20%28SET%29.pdf

id	iium-53222
recordtype	eprints
spelling	iium-532222017-01-10T08:34:26Z http://irep.iium.edu.my/53222/ Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor Ahamad Sukor, Masturah Hasbullah, Nurul Fadzlin Ibrahim, Siti Noorjannah TK Electrical engineering. Electronics Nuclear engineering Nowadays, CMOS Active Pixel Sensors (APS) are widely used especially in space mission. However, the space consists of various kind of radiation. Single-Event Transient (SET) is one of the concern for the circuits in the radiation environment. SETs are becoming a common phenomenon with technology scaling due to lower operating voltage and smaller nodal capacitance. A 60nm and 32nm PTM technology of 3T CMOS APS have been designed and simulated using Silvaco Gateway and exposed to a broad Linear Energy Transfer (LET) range to investigate the effects of SET towards downscaling of 3T CMOS APS and to observe the critical Linear Energy Transfer (LET) for each technology. The output current and voltages obtained for each simulation shows the effect of LET towards the performance of 3T CMOS APS. Varying the LET towards the same technology shows how huge the impact of LET towards the drain current of affected node. Then, we identify the critical LET for each technology. The SET effect is shown through the charge collection at different value of LET. Even though the effect of SET is momentary, it may propagate throughout the circuit and consequently cause the Single Event Upset (SEU) in memory devices. Penerbit UMT, Universiti Malaysia Terengganu (UMT) 2016 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/53222/1/53222_Single-event%20transient%20%28SET%29.pdf Ahamad Sukor, Masturah and Hasbullah, Nurul Fadzlin and Ibrahim, Siti Noorjannah (2016) Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor. In: 13th Universiti Malaysia Terengganu International Annual Symposium on Sustainability Science and Management (UMTAS 2016), 13th-15th Dec. 2016, Kuala Terengganu, Terengganu. http://umtas2016.umt.edu.my/?page_id=210
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Ahamad Sukor, Masturah Hasbullah, Nurul Fadzlin Ibrahim, Siti Noorjannah Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor
description	Nowadays, CMOS Active Pixel Sensors (APS) are widely used especially in space mission. However, the space consists of various kind of radiation. Single-Event Transient (SET) is one of the concern for the circuits in the radiation environment. SETs are becoming a common phenomenon with technology scaling due to lower operating voltage and smaller nodal capacitance. A 60nm and 32nm PTM technology of 3T CMOS APS have been designed and simulated using Silvaco Gateway and exposed to a broad Linear Energy Transfer (LET) range to investigate the effects of SET towards downscaling of 3T CMOS APS and to observe the critical Linear Energy Transfer (LET) for each technology. The output current and voltages obtained for each simulation shows the effect of LET towards the performance of 3T CMOS APS. Varying the LET towards the same technology shows how huge the impact of LET towards the drain current of affected node. Then, we identify the critical LET for each technology. The SET effect is shown through the charge collection at different value of LET. Even though the effect of SET is momentary, it may propagate throughout the circuit and consequently cause the Single Event Upset (SEU) in memory devices.
format	Conference or Workshop Item
author	Ahamad Sukor, Masturah Hasbullah, Nurul Fadzlin Ibrahim, Siti Noorjannah
author_facet	Ahamad Sukor, Masturah Hasbullah, Nurul Fadzlin Ibrahim, Siti Noorjannah
author_sort	Ahamad Sukor, Masturah
title	Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor
title_short	Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor
title_full	Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor
title_fullStr	Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor
title_full_unstemmed	Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor
title_sort	single-event transient (set) effects on 60nm and 32nm 3t cmos active pixel sensor
publisher	Penerbit UMT, Universiti Malaysia Terengganu (UMT)
publishDate	2016
url	http://irep.iium.edu.my/53222/ http://irep.iium.edu.my/53222/ http://irep.iium.edu.my/53222/1/53222_Single-event%20transient%20%28SET%29.pdf
first_indexed	2023-09-18T21:15:20Z
last_indexed	2023-09-18T21:15:20Z
_version_	1777411524833312768

Single-event Transient (SET) effects on 60nm and 32nm 3T CMOS active pixel sensor

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