Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication

Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir pro...

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Main Authors:	Ahmad Faizal, Mohd Zain, Jia, Wei Low, Nafarizal, Nayan, Mohd Zainizan, Sahdan, Mohd Khairul, Ahmad, Ali Yeon, Md Shakaff, Ammar, Zakaria
Format:	Article
Language:	English
Published:	Penerbit Universiti Teknologi Malaysia 2015
Subjects:	TS Manufactures
Online Access:	http://umpir.ump.edu.my/id/eprint/8790/ http://umpir.ump.edu.my/id/eprint/8790/ http://umpir.ump.edu.my/id/eprint/8790/ http://umpir.ump.edu.my/id/eprint/8790/1/Spectroscopic%20Studies%20of%20Magnetron%20Sputtering%20Plasma%20Discharge%20in%20Cu%20O2%20Ar%20Mixture%20for%20Copper%20Oxide%20Thin%20Film%20Fabrication.pdf

id	ump-8790
recordtype	eprints
spelling	ump-87902016-04-20T01:22:24Z http://umpir.ump.edu.my/id/eprint/8790/ Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication Ahmad Faizal, Mohd Zain Jia, Wei Low Nafarizal, Nayan Mohd Zainizan, Sahdan Mohd Khairul, Ahmad Ali Yeon, Md Shakaff Ammar, Zakaria TS Manufactures Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm.The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to - 60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate Penerbit Universiti Teknologi Malaysia 2015 Article PeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/8790/1/Spectroscopic%20Studies%20of%20Magnetron%20Sputtering%20Plasma%20Discharge%20in%20Cu%20O2%20Ar%20Mixture%20for%20Copper%20Oxide%20Thin%20Film%20Fabrication.pdf Ahmad Faizal, Mohd Zain and Jia, Wei Low and Nafarizal, Nayan and Mohd Zainizan, Sahdan and Mohd Khairul, Ahmad and Ali Yeon, Md Shakaff and Ammar, Zakaria (2015) Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication. Jurnal Teknologi (Sciences and Engineering), 73 (1). pp. 11-15. ISSN 0127-9696 (print); 2180-3722 (online) http://www.jurnalteknologi.utm.my/index.php/jurnalteknologi/article/view/2984 DOI: 10.11113/jt.v73.2984
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TS Manufactures
spellingShingle	TS Manufactures Ahmad Faizal, Mohd Zain Jia, Wei Low Nafarizal, Nayan Mohd Zainizan, Sahdan Mohd Khairul, Ahmad Ali Yeon, Md Shakaff Ammar, Zakaria Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication
description	Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm.The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to - 60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate
format	Article
author	Ahmad Faizal, Mohd Zain Jia, Wei Low Nafarizal, Nayan Mohd Zainizan, Sahdan Mohd Khairul, Ahmad Ali Yeon, Md Shakaff Ammar, Zakaria
author_facet	Ahmad Faizal, Mohd Zain Jia, Wei Low Nafarizal, Nayan Mohd Zainizan, Sahdan Mohd Khairul, Ahmad Ali Yeon, Md Shakaff Ammar, Zakaria
author_sort	Ahmad Faizal, Mohd Zain
title	Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication
title_short	Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication
title_full	Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication
title_fullStr	Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication
title_full_unstemmed	Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication
title_sort	spectroscopic studies of magnetron sputtering plasma discharge in cu/o2/ar mixture for copper oxide thin film fabrication
publisher	Penerbit Universiti Teknologi Malaysia
publishDate	2015
url	http://umpir.ump.edu.my/id/eprint/8790/ http://umpir.ump.edu.my/id/eprint/8790/ http://umpir.ump.edu.my/id/eprint/8790/ http://umpir.ump.edu.my/id/eprint/8790/1/Spectroscopic%20Studies%20of%20Magnetron%20Sputtering%20Plasma%20Discharge%20in%20Cu%20O2%20Ar%20Mixture%20for%20Copper%20Oxide%20Thin%20Film%20Fabrication.pdf
first_indexed	2023-09-18T22:06:45Z
last_indexed	2023-09-18T22:06:45Z
_version_	1777414758930055168

Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication

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