Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor

Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor

This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evalua...

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Bibliographic Details
Main Authors: Mahmood, Ahmed, Jabbar, Waheb A., Saad, Wasan Kadhim, Hashim, Yasir, Hadi, Manap
Format: Conference or Workshop Item
Language:English
Published: IEEE 2018
Subjects:
T Technology (General)
Online Access:http://umpir.ump.edu.my/id/eprint/25088/
http://umpir.ump.edu.my/id/eprint/25088/
http://umpir.ump.edu.my/id/eprint/25088/1/Optimal%20Nano-Dimensional%20Channel%20of%20GaAs-FinFET%20Transistor.pdf

Internet

http://umpir.ump.edu.my/id/eprint/25088/
http://umpir.ump.edu.my/id/eprint/25088/
http://umpir.ump.edu.my/id/eprint/25088/1/Optimal%20Nano-Dimensional%20Channel%20of%20GaAs-FinFET%20Transistor.pdf

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