Temperature sensitivity of silicon nanowire transistor based on channel length

Temperature sensitivity of silicon nanowire transistor based on channel length

This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the gate length, and also presents the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire. Current-...

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Main Authors: AlAriqi, Hani Taha, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Format: Conference or Workshop Item
Language:English
Published: IEEE 2019
Subjects:
T Technology (General)
Online Access:http://umpir.ump.edu.my/id/eprint/24710/
http://umpir.ump.edu.my/id/eprint/24710/
http://umpir.ump.edu.my/id/eprint/24710/1/44.2%20Temperature%20sensitivity%20of%20silicon%20nanowire%20transistor%20based%20on%20channel%20length.pdf
id ump-24710
recordtype eprints
spelling ump-247102019-12-03T01:50:57Z http://umpir.ump.edu.my/id/eprint/24710/ Temperature sensitivity of silicon nanowire transistor based on channel length AlAriqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap T Technology (General) This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the gate length, and also presents the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire. Current-voltage characteristics with different values of temperature and with different length of the Nano wire gate (Lg = 25, 45, 65, 85 and 105 nm), were simulated. MOS diode mode connection suggested to measure the temperature sensitivity of SiNWT. The final results show that the best temperature sensitivity of SiNWT based in largest ΔI occurred at working voltage VDD range 1 V to 3.5 V, depends on channel length range 25 nm to 85 nm and beyond the temperature sensitivity will be constant even the channel length increased up to 105 nm. IEEE 2019-01 Conference or Workshop Item PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/24710/1/44.2%20Temperature%20sensitivity%20of%20silicon%20nanowire%20transistor%20based%20on%20channel%20length.pdf AlAriqi, Hani Taha and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2019) Temperature sensitivity of silicon nanowire transistor based on channel length. In: IEEE 8th International Conference On Modeling Simulation And Applied Optimization (ICMSAO 2019), 15-17 April 2019 , University of Bahrain, Bahrain. pp. 1-4.. ISBN 978-1-5386-7684-4 https://doi.org/10.1109/ICMSAO.2019.8880360
repository_type Digital Repository
institution_category Local University
institution Universiti Malaysia Pahang
building UMP Institutional Repository
collection Online Access
language English
topic T Technology (General)
spellingShingle T Technology (General)
AlAriqi, Hani Taha
Jabbar, Waheb A.
Hashim, Yasir
Hadi, Manap
Temperature sensitivity of silicon nanowire transistor based on channel length
description This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the gate length, and also presents the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire. Current-voltage characteristics with different values of temperature and with different length of the Nano wire gate (Lg = 25, 45, 65, 85 and 105 nm), were simulated. MOS diode mode connection suggested to measure the temperature sensitivity of SiNWT. The final results show that the best temperature sensitivity of SiNWT based in largest ΔI occurred at working voltage VDD range 1 V to 3.5 V, depends on channel length range 25 nm to 85 nm and beyond the temperature sensitivity will be constant even the channel length increased up to 105 nm.
format Conference or Workshop Item
author AlAriqi, Hani Taha
Jabbar, Waheb A.
Hashim, Yasir
Hadi, Manap
author_facet AlAriqi, Hani Taha
Jabbar, Waheb A.
Hashim, Yasir
Hadi, Manap
author_sort AlAriqi, Hani Taha
title Temperature sensitivity of silicon nanowire transistor based on channel length
title_short Temperature sensitivity of silicon nanowire transistor based on channel length
title_full Temperature sensitivity of silicon nanowire transistor based on channel length
title_fullStr Temperature sensitivity of silicon nanowire transistor based on channel length
title_full_unstemmed Temperature sensitivity of silicon nanowire transistor based on channel length
title_sort temperature sensitivity of silicon nanowire transistor based on channel length
publisher IEEE
publishDate 2019
url http://umpir.ump.edu.my/id/eprint/24710/
http://umpir.ump.edu.my/id/eprint/24710/
http://umpir.ump.edu.my/id/eprint/24710/1/44.2%20Temperature%20sensitivity%20of%20silicon%20nanowire%20transistor%20based%20on%20channel%20length.pdf
first_indexed 2023-09-18T22:37:33Z
last_indexed 2023-09-18T22:37:33Z
_version_ 1777416697477595136

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