Temperature sensitivity of silicon nanowire transistor based on channel length
This paper investigates the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the gate length, and also presents the possibility of using it as a Nano- temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire. Current-...
| Main Authors: | , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IEEE
2019
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/24710/ http://umpir.ump.edu.my/id/eprint/24710/ http://umpir.ump.edu.my/id/eprint/24710/1/44.2%20Temperature%20sensitivity%20of%20silicon%20nanowire%20transistor%20based%20on%20channel%20length.pdf |