Nanowire NMOS Logic Inverter Characterization
This study is the first to demonstrate characteristics optimization of nanowire N-Channel Metal Oxide Semiconductor (NW-MOS) logic inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. A computer-based model used to produce stat...
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| Format: | Article |
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American Scientific Publishers
2016
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| Online Access: | http://umpir.ump.edu.my/id/eprint/12987/ http://umpir.ump.edu.my/id/eprint/12987/ |