Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique

The effects of rf power on the structural properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited using layer-by-layer (LbL) deposition technique in a home-built plasma enhanced chemical vapor deposition (PECVD) system were investigated. The properties of the films were cha...

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Main Authors:	Goh, Boon Tong, Muhamad Rasat Muhamad, Saadah Abdul Rahman
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2012
Online Access:	http://journalarticle.ukm.my/5420/ http://journalarticle.ukm.my/5420/ http://journalarticle.ukm.my/5420/1/08%2520Goh%2520Boon.pdf

id	ukm-5420
recordtype	eprints
spelling	ukm-54202016-12-14T06:38:24Z http://journalarticle.ukm.my/5420/ Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique Goh, Boon Tong Muhamad Rasat Muhamad, Saadah Abdul Rahman, The effects of rf power on the structural properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited using layer-by-layer (LbL) deposition technique in a home-built plasma enhanced chemical vapor deposition (PECVD) system were investigated. The properties of the films were characterized by X-ray diffraction (XRD), micro-Raman scattering spectroscopy, high resolution transmission electron microscope (HRTEM) and Fourier transform infrared (FTIR) spectroscopy. The results showed that the films consisted of different size of Si crystallites embedded within an amorphous matrix and the growth of these crystallites was suppressed at higher rf powers. The crystalline volume fraction of the films was optimum at the rf power of 60 W and contained both small and big crystallites with diameters of 3.7 nm and 120 nm, respectively. The hydrogen content increased with increasing rf power and enhanced the structural disorder of the amorphous matrix thus decreasing the crystalline volume fraction of the films. Correlation of crystalline volume fraction, hydrogen content and structure disorder of the films under the effect of rf power is discussed. Universiti Kebangsaan Malaysia 2012-08 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/5420/1/08%2520Goh%2520Boon.pdf Goh, Boon Tong and Muhamad Rasat Muhamad, and Saadah Abdul Rahman, (2012) Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique. Sains Malaysiana, 41 (8). pp. 993-1000. ISSN 0126-6039 http://www.ukm.my/jsm/
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	The effects of rf power on the structural properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited using layer-by-layer (LbL) deposition technique in a home-built plasma enhanced chemical vapor deposition (PECVD) system were investigated. The properties of the films were characterized by X-ray diffraction (XRD), micro-Raman scattering spectroscopy, high resolution transmission electron microscope (HRTEM) and Fourier transform infrared (FTIR) spectroscopy. The results showed that the films consisted of different size of Si crystallites embedded within an amorphous matrix and the growth of these crystallites was suppressed at higher rf powers. The crystalline volume fraction of the films was optimum at the rf power of 60 W and contained both small and big crystallites with diameters of 3.7 nm and 120 nm, respectively. The hydrogen content increased with increasing rf power and enhanced the structural disorder of the amorphous matrix thus decreasing the crystalline volume fraction of the films. Correlation of crystalline volume fraction, hydrogen content and structure disorder of the films under the effect of rf power is discussed.
format	Article
author	Goh, Boon Tong Muhamad Rasat Muhamad, Saadah Abdul Rahman,
spellingShingle	Goh, Boon Tong Muhamad Rasat Muhamad, Saadah Abdul Rahman, Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
author_facet	Goh, Boon Tong Muhamad Rasat Muhamad, Saadah Abdul Rahman,
author_sort	Goh, Boon Tong
title	Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
title_short	Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
title_full	Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
title_fullStr	Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
title_full_unstemmed	Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
title_sort	effects of rf power on structural properties of nc-si:h thin films deposited by layer-by-layer (lbl) deposition technique
publisher	Universiti Kebangsaan Malaysia
publishDate	2012
url	http://journalarticle.ukm.my/5420/ http://journalarticle.ukm.my/5420/ http://journalarticle.ukm.my/5420/1/08%2520Goh%2520Boon.pdf
first_indexed	2023-09-18T19:44:06Z
last_indexed	2023-09-18T19:44:06Z
_version_	1777405784747933696

Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique

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