Pencirian proses penyediaan titanium silisida untuk kegunaan saling hubung litar bersepadu CMOS
Characterization of the titanium silicide process preparation for the application of interconnection in CMOS integrated circuit has been characterized. The process characterize are titanium deposition, selective wet etching, native oxide removal and thermal budget adjustment of reflow- anneal bor...
| Main Authors: | , , |
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| Format: | Article |
| Published: |
2000
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| Online Access: | http://journalarticle.ukm.my/1368/ http://journalarticle.ukm.my/1368/ |