Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature

Thermal dependence experiments have been carried out on silicon carbide Schottky power diodes. The devices were exposed to 3 MeV electrons with 10 MGy dose. Current density-voltage (~300 K to ~490 K) characterization have been used for the investigation. The results show that, at the highest tested...

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Main Authors:	Hasbullah, Nurul Fadzlin, Mohd Khairi, Mohamad Azim, Abdullah, Yusof
Format:	Article
Language:	English
Published:	Inderscience Enterprises Ltd. 2019
Subjects:	T Technology (General) T175 Industrial research. Research and development TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://irep.iium.edu.my/72560/ http://irep.iium.edu.my/72560/ http://irep.iium.edu.my/72560/1/Editor%20final%20ver._Response%20of%20Electron-Irradiated%20Silicon%20Carbide%20Schottky%20Power%20Diodes%20at%20Elevated%20Temperature.pdf

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spelling	iium-725602019-06-12T07:06:17Z http://irep.iium.edu.my/72560/ Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature Hasbullah, Nurul Fadzlin Mohd Khairi, Mohamad Azim Abdullah, Yusof T Technology (General) T175 Industrial research. Research and development TK Electrical engineering. Electronics Nuclear engineering Thermal dependence experiments have been carried out on silicon carbide Schottky power diodes. The devices were exposed to 3 MeV electrons with 10 MGy dose. Current density-voltage (~300 K to ~490 K) characterization have been used for the investigation. The results show that, at the highest tested temperature, the forward current density at 0.3 V increased approximately 7 orders of magnitude for unirradiated devices and approximately 8 orders of magnitude for the irradiated devices. The increase is believed due to the generation of free carriers which obtained the energy from the temperature. The series resistance of unirradiated increased with increasing temperature which may be due to the decrease in the free carrier mobility, whilst the series resistance of irradiated devices decreased with increasing temperature which indicates that more free carriers have acquired enough energy to be released from the traps introduced by the irradiation. The reverse current density shows that the current increased with increasing temperature due to the radiation-induced defects that act as generation-recombination centres. The activation energies of the irradiated devices were derived, and it is higher than the unirradiated devices. On top of that, there are two slopes in the plot of the activation energy versus voltage which suggests that the reverse leakage current is probably due to two different type of mechanisms. Inderscience Enterprises Ltd. 2019 Article PeerReviewed application/pdf en http://irep.iium.edu.my/72560/1/Editor%20final%20ver._Response%20of%20Electron-Irradiated%20Silicon%20Carbide%20Schottky%20Power%20Diodes%20at%20Elevated%20Temperature.pdf Hasbullah, Nurul Fadzlin and Mohd Khairi, Mohamad Azim and Abdullah, Yusof (2019) Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature. International Journal of Power Electronics. pp. 1-13. ISSN 1756-638X E-ISSN 1756-6398 (In Press) https://www.inderscience.com/info/ingeneral/forthcoming.php?jcode=ijpelec
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	T Technology (General) T175 Industrial research. Research and development TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	T Technology (General) T175 Industrial research. Research and development TK Electrical engineering. Electronics Nuclear engineering Hasbullah, Nurul Fadzlin Mohd Khairi, Mohamad Azim Abdullah, Yusof Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature
description	Thermal dependence experiments have been carried out on silicon carbide Schottky power diodes. The devices were exposed to 3 MeV electrons with 10 MGy dose. Current density-voltage (~300 K to ~490 K) characterization have been used for the investigation. The results show that, at the highest tested temperature, the forward current density at 0.3 V increased approximately 7 orders of magnitude for unirradiated devices and approximately 8 orders of magnitude for the irradiated devices. The increase is believed due to the generation of free carriers which obtained the energy from the temperature. The series resistance of unirradiated increased with increasing temperature which may be due to the decrease in the free carrier mobility, whilst the series resistance of irradiated devices decreased with increasing temperature which indicates that more free carriers have acquired enough energy to be released from the traps introduced by the irradiation. The reverse current density shows that the current increased with increasing temperature due to the radiation-induced defects that act as generation-recombination centres. The activation energies of the irradiated devices were derived, and it is higher than the unirradiated devices. On top of that, there are two slopes in the plot of the activation energy versus voltage which suggests that the reverse leakage current is probably due to two different type of mechanisms.
format	Article
author	Hasbullah, Nurul Fadzlin Mohd Khairi, Mohamad Azim Abdullah, Yusof
author_facet	Hasbullah, Nurul Fadzlin Mohd Khairi, Mohamad Azim Abdullah, Yusof
author_sort	Hasbullah, Nurul Fadzlin
title	Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature
title_short	Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature
title_full	Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature
title_fullStr	Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature
title_full_unstemmed	Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature
title_sort	response of electron-irradiated silicon carbide schottky power diodes at elevated temperature
publisher	Inderscience Enterprises Ltd.
publishDate	2019
url	http://irep.iium.edu.my/72560/ http://irep.iium.edu.my/72560/ http://irep.iium.edu.my/72560/1/Editor%20final%20ver._Response%20of%20Electron-Irradiated%20Silicon%20Carbide%20Schottky%20Power%20Diodes%20at%20Elevated%20Temperature.pdf
first_indexed	2023-09-18T21:42:48Z
last_indexed	2023-09-18T21:42:48Z
_version_	1777413252492296192

Response of electron-irradiated silicon carbide Schottky power diodes at elevated temperature

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