Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation

In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With increasing demand for such semiconductor material structures, it is important to investigate the differences in the reliab...

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Main Authors:	Ahmad Fauzi, Dhiyauddin, Alang Rashid, Nahrul Khair, Mohamed Zin, Muhammad Rawi, Hasbullah, Nurul Fadzlin
Format:	Article
Language:	English English English
Published:	IIUM Press 2017
Subjects:	TA Engineering (General). Civil engineering (General)
Online Access:	http://irep.iium.edu.my/57752/ http://irep.iium.edu.my/57752/ http://irep.iium.edu.my/57752/1/57752_Radiation%20performance%20of%20Gan%20and%20InAs.pdf http://irep.iium.edu.my/57752/7/57752_Radiation%20performance%20of%20Gan%20and%20InAs_SCOPUS.pdf http://irep.iium.edu.my/57752/8/57752_Radiation%20performance%20of%20Gan%20and%20InAs_WOS.pdf

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spelling	iium-577522017-10-09T09:14:53Z http://irep.iium.edu.my/57752/ Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation Ahmad Fauzi, Dhiyauddin Alang Rashid, Nahrul Khair Mohamed Zin, Muhammad Rawi Hasbullah, Nurul Fadzlin TA Engineering (General). Civil engineering (General) In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With increasing demand for such semiconductor material structures, it is important to investigate the differences in the reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diodes (LED) and InAs/GaAs dot-in-a well (DWELL) samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in a PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V) and capacitance-voltage (C-V) electrical characterisation method. Results suggested that the GaN based sample was less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample. IIUM Press 2017 Article PeerReviewed application/pdf en http://irep.iium.edu.my/57752/1/57752_Radiation%20performance%20of%20Gan%20and%20InAs.pdf application/pdf en http://irep.iium.edu.my/57752/7/57752_Radiation%20performance%20of%20Gan%20and%20InAs_SCOPUS.pdf application/pdf en http://irep.iium.edu.my/57752/8/57752_Radiation%20performance%20of%20Gan%20and%20InAs_WOS.pdf Ahmad Fauzi, Dhiyauddin and Alang Rashid, Nahrul Khair and Mohamed Zin, Muhammad Rawi and Hasbullah, Nurul Fadzlin (2017) Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation. IIUM Engineering Journal, 18 (1). pp. 101-109. ISSN 1511-788X E-ISSN 2289-7860 http://journals.iium.edu.my/ejournal/index.php/iiumej/article/view/653
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English English
topic	TA Engineering (General). Civil engineering (General)
spellingShingle	TA Engineering (General). Civil engineering (General) Ahmad Fauzi, Dhiyauddin Alang Rashid, Nahrul Khair Mohamed Zin, Muhammad Rawi Hasbullah, Nurul Fadzlin Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation
description	In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With increasing demand for such semiconductor material structures, it is important to investigate the differences in the reliability and radiation hardness properties of these two devices. For this purpose, three sets of GaN light-emitting diodes (LED) and InAs/GaAs dot-in-a well (DWELL) samples were irradiated with thermal neutron of fluence ranging from 3×1013 to 6×1014 neutron/cm2 in a PUSPATI TRIGA research reactor. The radiation performances for each device were evaluated based on the current-voltage (I-V) and capacitance-voltage (C-V) electrical characterisation method. Results suggested that the GaN based sample was less susceptible to electrical changes due to the thermal neutron radiation effects compared to the QD based sample.
format	Article
author	Ahmad Fauzi, Dhiyauddin Alang Rashid, Nahrul Khair Mohamed Zin, Muhammad Rawi Hasbullah, Nurul Fadzlin
author_facet	Ahmad Fauzi, Dhiyauddin Alang Rashid, Nahrul Khair Mohamed Zin, Muhammad Rawi Hasbullah, Nurul Fadzlin
author_sort	Ahmad Fauzi, Dhiyauddin
title	Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation
title_short	Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation
title_full	Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation
title_fullStr	Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation
title_full_unstemmed	Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation
title_sort	radiation performance of gan and inas/gaas quantum dot based devices subjected to neutron radiation
publisher	IIUM Press
publishDate	2017
url	http://irep.iium.edu.my/57752/ http://irep.iium.edu.my/57752/ http://irep.iium.edu.my/57752/1/57752_Radiation%20performance%20of%20Gan%20and%20InAs.pdf http://irep.iium.edu.my/57752/7/57752_Radiation%20performance%20of%20Gan%20and%20InAs_SCOPUS.pdf http://irep.iium.edu.my/57752/8/57752_Radiation%20performance%20of%20Gan%20and%20InAs_WOS.pdf
first_indexed	2023-09-18T21:21:39Z
last_indexed	2023-09-18T21:21:39Z
_version_	1777411921719328768

Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation

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