Radiation performance of Gan and InAs/GaAs quantum dot based devices subjected to neutron radiation
In addition to their useful optoelectronics functions, gallium nitride (GaN) and quantum dots (QDs) based structures are also known for their radiation hardness properties. With increasing demand for such semiconductor material structures, it is important to investigate the differences in the reliab...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English English English |
| Published: |
IIUM Press
2017
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/57752/ http://irep.iium.edu.my/57752/ http://irep.iium.edu.my/57752/1/57752_Radiation%20performance%20of%20Gan%20and%20InAs.pdf http://irep.iium.edu.my/57752/7/57752_Radiation%20performance%20of%20Gan%20and%20InAs_SCOPUS.pdf http://irep.iium.edu.my/57752/8/57752_Radiation%20performance%20of%20Gan%20and%20InAs_WOS.pdf |
Internet
http://irep.iium.edu.my/57752/http://irep.iium.edu.my/57752/
http://irep.iium.edu.my/57752/1/57752_Radiation%20performance%20of%20Gan%20and%20InAs.pdf
http://irep.iium.edu.my/57752/7/57752_Radiation%20performance%20of%20Gan%20and%20InAs_SCOPUS.pdf
http://irep.iium.edu.my/57752/8/57752_Radiation%20performance%20of%20Gan%20and%20InAs_WOS.pdf