Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics
The demands and expectations of high performance devices using Field Effect Transistors (FETs) are increased day by day. In order to obtain transistors with smaller size but with increased speed and performance, device scaling was done. However, making transistor in smaller size is not an easy...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
IEEE
2016
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/54639/ http://irep.iium.edu.my/54639/ http://irep.iium.edu.my/54639/ http://irep.iium.edu.my/54639/1/54639.pdf http://irep.iium.edu.my/54639/2/54639-Triangular%20Shaped%20Silicon%20Nanowire%20FET%20Characterization%20Using%20COMSOL%20Multiphysics_SCOPUS.pdf |
| Summary: | The demands and expectations of high
performance devices using Field Effect Transistors (FETs) are
increased day by day. In order to obtain transistors with smaller
size but with increased speed and performance, device scaling
was done. However, making transistor in smaller size is not an
easy task. One of the challenges with scaling the size of transistor
is the short channel effects (SCEs). In order to reduce short
channel effects, non-classical FETs were introduced. On top of
that, the next transistor technology that was looked into was the
semiconductor nanowire FET. In this work, a triangular shaped
silicon nanowire (Si NW) FET with 300 nm channel length was
designed using latest finite element analysis tool COMSOL
Multiphysics and its SCE parameters were measured. The
designed triangular shaped Si NW FET shows better
performance in reducing the SCEs when compared with a similar
sized cylindrical shaped Si NW FET and commercial MOSFET,
(ZVNL120A). |
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