Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics
The demands and expectations of high performance devices using Field Effect Transistors (FETs) are increased day by day. In order to obtain transistors with smaller size but with increased speed and performance, device scaling was done. However, making transistor in smaller size is not an easy...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
IEEE
2016
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/54639/ http://irep.iium.edu.my/54639/ http://irep.iium.edu.my/54639/ http://irep.iium.edu.my/54639/1/54639.pdf http://irep.iium.edu.my/54639/2/54639-Triangular%20Shaped%20Silicon%20Nanowire%20FET%20Characterization%20Using%20COMSOL%20Multiphysics_SCOPUS.pdf |