Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation

In this paper, a characterization and comparison between the effects of Electron irradiation on low noise amplifiers (LNAs) implemented in a Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) and Gallium-Arsenide (GaAs) HBT technologies, respectively, was carried out. Previous studies...

Full description

Bibliographic Details
Main Authors:	Youssouf, Abdouraouf S., Habaebi, Mohamed Hadi, Ibrahim, S.Noorjannah, Hasbullah, Nurul Fadzlin
Format:	Conference or Workshop Item
Language:	English English
Published:	IEEE 2017
Subjects:	TK5101 Telecommunication. Including telegraphy, radio, radar, television
Online Access:	http://irep.iium.edu.my/54043/ http://irep.iium.edu.my/54043/ http://irep.iium.edu.my/54043/ http://irep.iium.edu.my/54043/14/54043-edited.pdf http://irep.iium.edu.my/54043/20/54043-Gain%20investigation%20for%20commercial%20GaAs%20and%20SiGe%20HBT%20LNA%27s%20under%20electron%20irradiation_SCOPUS.pdf

id	iium-54043
recordtype	eprints
spelling	iium-540432017-06-16T02:36:28Z http://irep.iium.edu.my/54043/ Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation Youssouf, Abdouraouf S. Habaebi, Mohamed Hadi Ibrahim, S.Noorjannah Hasbullah, Nurul Fadzlin TK5101 Telecommunication. Including telegraphy, radio, radar, television In this paper, a characterization and comparison between the effects of Electron irradiation on low noise amplifiers (LNAs) implemented in a Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) and Gallium-Arsenide (GaAs) HBT technologies, respectively, was carried out. Previous studies [1] have shown that the properties of SiGe and GaAs HBT's are very tolerant to gamma, neutron, and proton irradiation without additional radiation hardening. Nowadays, commercial on the shelves (COTS) LNAs have been used in CubeSat communication system lunched in Low and Medium Earth Orbits. It therefore believed that the electron radiation in space may degrade the LNA's performance and lead to its failure. This is shows the importance of such investigation in evaluating and comparing the performance of the GaAs and SiGe LNAs which represent an important module in the front end of the communication receiver system. Two samples of GaAs and SiGe have been selected: the ADL 5523 GaAs and the SiGe BFU730F LNAs which are respectively cover a frequency range of 400MHz to 4 GHz and 2.3 to 2.7 GHz. Samples were irradiated with 3 MeV Electron doses ranging from 50 kGy to 250 kGy in the Electron Beam Irradiation Centre (Alutron), Nuclear Malaysia Agency. Results measurement have been carry out in the RF Laboratory in the faculty of engineering (IIUM), using the vector network analyzer 50 GHz. The results indicate that both SiGe and GaAs HBT technologies have been affected by the electron Irradiation. IEEE 2017-01-09 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/54043/14/54043-edited.pdf application/pdf en http://irep.iium.edu.my/54043/20/54043-Gain%20investigation%20for%20commercial%20GaAs%20and%20SiGe%20HBT%20LNA%27s%20under%20electron%20irradiation_SCOPUS.pdf Youssouf, Abdouraouf S. and Habaebi, Mohamed Hadi and Ibrahim, S.Noorjannah and Hasbullah, Nurul Fadzlin (2017) Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation. In: 14th Student Conference on Research and Development, IEEE (SCOReD 2016), 13th-14th December 2016, Kuala Lumpur. http://ieeexplore.ieee.org/document/7810094/ 10.1109/SCORED.2016.7810094
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TK5101 Telecommunication. Including telegraphy, radio, radar, television
spellingShingle	TK5101 Telecommunication. Including telegraphy, radio, radar, television Youssouf, Abdouraouf S. Habaebi, Mohamed Hadi Ibrahim, S.Noorjannah Hasbullah, Nurul Fadzlin Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation
description	In this paper, a characterization and comparison between the effects of Electron irradiation on low noise amplifiers (LNAs) implemented in a Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) and Gallium-Arsenide (GaAs) HBT technologies, respectively, was carried out. Previous studies [1] have shown that the properties of SiGe and GaAs HBT's are very tolerant to gamma, neutron, and proton irradiation without additional radiation hardening. Nowadays, commercial on the shelves (COTS) LNAs have been used in CubeSat communication system lunched in Low and Medium Earth Orbits. It therefore believed that the electron radiation in space may degrade the LNA's performance and lead to its failure. This is shows the importance of such investigation in evaluating and comparing the performance of the GaAs and SiGe LNAs which represent an important module in the front end of the communication receiver system. Two samples of GaAs and SiGe have been selected: the ADL 5523 GaAs and the SiGe BFU730F LNAs which are respectively cover a frequency range of 400MHz to 4 GHz and 2.3 to 2.7 GHz. Samples were irradiated with 3 MeV Electron doses ranging from 50 kGy to 250 kGy in the Electron Beam Irradiation Centre (Alutron), Nuclear Malaysia Agency. Results measurement have been carry out in the RF Laboratory in the faculty of engineering (IIUM), using the vector network analyzer 50 GHz. The results indicate that both SiGe and GaAs HBT technologies have been affected by the electron Irradiation.
format	Conference or Workshop Item
author	Youssouf, Abdouraouf S. Habaebi, Mohamed Hadi Ibrahim, S.Noorjannah Hasbullah, Nurul Fadzlin
author_facet	Youssouf, Abdouraouf S. Habaebi, Mohamed Hadi Ibrahim, S.Noorjannah Hasbullah, Nurul Fadzlin
author_sort	Youssouf, Abdouraouf S.
title	Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation
title_short	Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation
title_full	Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation
title_fullStr	Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation
title_full_unstemmed	Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation
title_sort	gain investigation for commercial gaas and sige hbt lna's under electron irradiation
publisher	IEEE
publishDate	2017
url	http://irep.iium.edu.my/54043/ http://irep.iium.edu.my/54043/ http://irep.iium.edu.my/54043/ http://irep.iium.edu.my/54043/14/54043-edited.pdf http://irep.iium.edu.my/54043/20/54043-Gain%20investigation%20for%20commercial%20GaAs%20and%20SiGe%20HBT%20LNA%27s%20under%20electron%20irradiation_SCOPUS.pdf
first_indexed	2023-09-18T21:16:28Z
last_indexed	2023-09-18T21:16:28Z
_version_	1777411595330125824

Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation

Similar Items