Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation
In this paper, a characterization and comparison between the effects of Electron irradiation on low noise amplifiers (LNAs) implemented in a Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) and Gallium-Arsenide (GaAs) HBT technologies, respectively, was carried out. Previous studies...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
IEEE
2017
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/54043/ http://irep.iium.edu.my/54043/ http://irep.iium.edu.my/54043/ http://irep.iium.edu.my/54043/14/54043-edited.pdf http://irep.iium.edu.my/54043/20/54043-Gain%20investigation%20for%20commercial%20GaAs%20and%20SiGe%20HBT%20LNA%27s%20under%20electron%20irradiation_SCOPUS.pdf |
Internet
http://irep.iium.edu.my/54043/http://irep.iium.edu.my/54043/
http://irep.iium.edu.my/54043/
http://irep.iium.edu.my/54043/14/54043-edited.pdf
http://irep.iium.edu.my/54043/20/54043-Gain%20investigation%20for%20commercial%20GaAs%20and%20SiGe%20HBT%20LNA%27s%20under%20electron%20irradiation_SCOPUS.pdf