3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs

Spacecraft, military mission requires electronic devices that are radiation hardened to extend exposure to ionizing radiation. Among many other semiconductors MOSFET is highly targeted due to its switching and amplifying application in electronics devices. This study investigates threshold voltage s...

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Main Authors:	Abubakkar, Sheik Fareed Ookar, Hasbullah, Nurul Fadzlin, Zabah, Nor Farahidah, Abdullah, Yusof
Format:	Conference or Workshop Item
Language:	English English
Published:	2014
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/46588/ http://irep.iium.edu.my/46588/ http://irep.iium.edu.my/46588/ http://irep.iium.edu.my/46588/1/46588.pdf http://irep.iium.edu.my/46588/4/46588_electron%20beam%20induced%20threshold%20voltage%20shifts_Scopus.pdf

id	iium-46588
recordtype	eprints
spelling	iium-465882017-09-07T01:36:00Z http://irep.iium.edu.my/46588/ 3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs Abubakkar, Sheik Fareed Ookar Hasbullah, Nurul Fadzlin Zabah, Nor Farahidah Abdullah, Yusof TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Spacecraft, military mission requires electronic devices that are radiation hardened to extend exposure to ionizing radiation. Among many other semiconductors MOSFET is highly targeted due to its switching and amplifying application in electronics devices. This study investigates threshold voltage shifts and drain current degradation mechanism for both P-channel and N-channel commercial Si MOSFET subjected to low doses of electron beam radiation. It is observed that at lower dose of electron beam radiation, the mechanism responsible for threshold voltage shifts is generation-recombination of electron - hole pair. For the N-channel device positive threshold voltage shifts were observed and negative threshold voltage shifts were found in the P - channel device. Electron radiation induced defect states act as traps for drain current degradation. Experiment data to the above mention samples revealed that generation of electron-hole pair and built of traps centers creates the defects such as threshold voltage shifts and drain current degradation. These defects are obtained due to the penetration of 3MeV energy of electron beam dose level from 50KGy to 250KGy. The irradiated devices were evaluated through its shifts in the current and voltage characteristics, results were analyzed and plotted for the both N-channel and P-channel MOSFET 2014-09-23 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/46588/1/46588.pdf application/pdf en http://irep.iium.edu.my/46588/4/46588_electron%20beam%20induced%20threshold%20voltage%20shifts_Scopus.pdf Abubakkar, Sheik Fareed Ookar and Hasbullah, Nurul Fadzlin and Zabah, Nor Farahidah and Abdullah, Yusof (2014) 3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs. In: 5th International Conference on Computer and Communication Engineering (ICCCE 2014), 23-25 Sep 2014, Kuala Lumpur. http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7031655 doi:10.1109/ICCCE.2014.84
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Abubakkar, Sheik Fareed Ookar Hasbullah, Nurul Fadzlin Zabah, Nor Farahidah Abdullah, Yusof 3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs
description	Spacecraft, military mission requires electronic devices that are radiation hardened to extend exposure to ionizing radiation. Among many other semiconductors MOSFET is highly targeted due to its switching and amplifying application in electronics devices. This study investigates threshold voltage shifts and drain current degradation mechanism for both P-channel and N-channel commercial Si MOSFET subjected to low doses of electron beam radiation. It is observed that at lower dose of electron beam radiation, the mechanism responsible for threshold voltage shifts is generation-recombination of electron - hole pair. For the N-channel device positive threshold voltage shifts were observed and negative threshold voltage shifts were found in the P - channel device. Electron radiation induced defect states act as traps for drain current degradation. Experiment data to the above mention samples revealed that generation of electron-hole pair and built of traps centers creates the defects such as threshold voltage shifts and drain current degradation. These defects are obtained due to the penetration of 3MeV energy of electron beam dose level from 50KGy to 250KGy. The irradiated devices were evaluated through its shifts in the current and voltage characteristics, results were analyzed and plotted for the both N-channel and P-channel MOSFET
format	Conference or Workshop Item
author	Abubakkar, Sheik Fareed Ookar Hasbullah, Nurul Fadzlin Zabah, Nor Farahidah Abdullah, Yusof
author_facet	Abubakkar, Sheik Fareed Ookar Hasbullah, Nurul Fadzlin Zabah, Nor Farahidah Abdullah, Yusof
author_sort	Abubakkar, Sheik Fareed Ookar
title	3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs
title_short	3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs
title_full	3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs
title_fullStr	3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs
title_full_unstemmed	3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs
title_sort	3mev-electron beam induced threshold voltage shifts and drain current degradation on zvn3320fta & zvp3310fta commercial mosfets
publishDate	2014
url	http://irep.iium.edu.my/46588/ http://irep.iium.edu.my/46588/ http://irep.iium.edu.my/46588/ http://irep.iium.edu.my/46588/1/46588.pdf http://irep.iium.edu.my/46588/4/46588_electron%20beam%20induced%20threshold%20voltage%20shifts_Scopus.pdf
first_indexed	2023-09-18T21:06:20Z
last_indexed	2023-09-18T21:06:20Z
_version_	1777410957664845824

3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs

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