3MeV-electron beam induced threshold voltage shifts and drain current degradation on ZVN3320FTA & ZVP3310FTA commercial MOSFETs
Spacecraft, military mission requires electronic devices that are radiation hardened to extend exposure to ionizing radiation. Among many other semiconductors MOSFET is highly targeted due to its switching and amplifying application in electronics devices. This study investigates threshold voltage s...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/46588/ http://irep.iium.edu.my/46588/ http://irep.iium.edu.my/46588/ http://irep.iium.edu.my/46588/1/46588.pdf http://irep.iium.edu.my/46588/4/46588_electron%20beam%20induced%20threshold%20voltage%20shifts_Scopus.pdf |