Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures

The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×1016 neutron/cm2. Based on the current-voltag...

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Main Authors:	Ahmad Fauzi, Dhiyauddin, Alang Md Rashid, Nahrul Khair, ., Md. Rashid, Che Omar, Nuurul Iffah, Hasbullah, Nurul Fadzlin, Mohamed Zin, muhammad Rawi
Format:	Conference or Workshop Item
Language:	English
Published:	2013
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/46587/ http://irep.iium.edu.my/46587/ http://irep.iium.edu.my/46587/ http://irep.iium.edu.my/46587/1/46587.pdf

id	iium-46587
recordtype	eprints
spelling	iium-465872016-03-01T05:50:08Z http://irep.iium.edu.my/46587/ Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures Ahmad Fauzi, Dhiyauddin Alang Md Rashid, Nahrul Khair ., Md. Rashid Che Omar, Nuurul Iffah Hasbullah, Nurul Fadzlin Mohamed Zin, muhammad Rawi TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×1016 neutron/cm2. Based on the current-voltage (I-V) characteristics, it was discovered that the forward bias (FB) leakage current for both devices decreased as an effect of increment in series resistance. In reverse bias (RB), there is significant decrement in leakage current of DWELL samples in the order of 2 orders of magnitude. The RB leakage current of GaAs diode showed similar response as in FB. However, the QD based structures showed less defects compared to the GaAs based diodes 2013-10-30 Conference or Workshop Item PeerReviewed application/pdf en http://irep.iium.edu.my/46587/1/46587.pdf Ahmad Fauzi, Dhiyauddin and Alang Md Rashid, Nahrul Khair and ., Md. Rashid and Che Omar, Nuurul Iffah and Hasbullah, Nurul Fadzlin and Mohamed Zin, muhammad Rawi (2013) Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures. In: 2013 IEEE 4th International Conference on Photonics (ICP), 28th-30th Oct. 2013, Equatorial Hotel, Melaka. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6687122 doi:10.1109/ICP.2013.6687122
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
spellingShingle	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices Ahmad Fauzi, Dhiyauddin Alang Md Rashid, Nahrul Khair ., Md. Rashid Che Omar, Nuurul Iffah Hasbullah, Nurul Fadzlin Mohamed Zin, muhammad Rawi Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures
description	The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×1016 neutron/cm2. Based on the current-voltage (I-V) characteristics, it was discovered that the forward bias (FB) leakage current for both devices decreased as an effect of increment in series resistance. In reverse bias (RB), there is significant decrement in leakage current of DWELL samples in the order of 2 orders of magnitude. The RB leakage current of GaAs diode showed similar response as in FB. However, the QD based structures showed less defects compared to the GaAs based diodes
format	Conference or Workshop Item
author	Ahmad Fauzi, Dhiyauddin Alang Md Rashid, Nahrul Khair ., Md. Rashid Che Omar, Nuurul Iffah Hasbullah, Nurul Fadzlin Mohamed Zin, muhammad Rawi
author_facet	Ahmad Fauzi, Dhiyauddin Alang Md Rashid, Nahrul Khair ., Md. Rashid Che Omar, Nuurul Iffah Hasbullah, Nurul Fadzlin Mohamed Zin, muhammad Rawi
author_sort	Ahmad Fauzi, Dhiyauddin
title	Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures
title_short	Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures
title_full	Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures
title_fullStr	Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures
title_full_unstemmed	Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures
title_sort	effects of high neutron fluence on the electrical characteristics of inas quantum dot structures
publishDate	2013
url	http://irep.iium.edu.my/46587/ http://irep.iium.edu.my/46587/ http://irep.iium.edu.my/46587/ http://irep.iium.edu.my/46587/1/46587.pdf
first_indexed	2023-09-18T21:06:19Z
last_indexed	2023-09-18T21:06:19Z
_version_	1777410957522239488

Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures

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