Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures
The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×1016 neutron/cm2. Based on the current-voltag...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/46587/ http://irep.iium.edu.my/46587/ http://irep.iium.edu.my/46587/ http://irep.iium.edu.my/46587/1/46587.pdf |