Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers

A cooperative transition of antisite As (AsGa) defects in Be-doped low-temperature grown GaAs layers was studied by comparing magnetization of samples with different AsGa+ ions concentrations. With the aid of first principle calculations, the origin of cooperative transitions was shown to be due to...

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Bibliographic Details
Main Authors: Mohamed, Mohd Ambri, Lam, Pham Tien, Otsuka, N.
Format: Article
Language:English
Published: Elsevier 2013
Subjects:
Online Access:http://irep.iium.edu.my/29881/
http://irep.iium.edu.my/29881/
http://irep.iium.edu.my/29881/
http://irep.iium.edu.my/29881/1/journal_of_crystal_growth.pdf