Fabrication of aluminium doped zinc oxide piezoelectric thin ﬁlm on a silicon substrate for piezoelectric MEMS energy harvesters

Thin film piezoelectric materials play an essential role in micro electro mechanical system (MEMS)energy harvesting due to its low power requirement and high available energy densities. Non-ferroelectric piezoelectric materials such as ZnO and AlN are highly silicon compatible making it suitable for...

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Main Authors:	Md Ralib @ Md Raghib, Aliza 'Aini, Nordin, Anis Nurashikin, Salleh, Hanim, Othman, Raihan
Format:	Article
Language:	English
Published:	Springer Berlin / Heidelberg 2012
Subjects:	TP155 Chemical engineering
Online Access:	http://irep.iium.edu.my/25085/ http://irep.iium.edu.my/25085/ http://irep.iium.edu.my/25085/ http://irep.iium.edu.my/25085/1/25085.pdf

id	iium-25085
recordtype	eprints
spelling	iium-250852016-03-17T00:57:17Z http://irep.iium.edu.my/25085/ Fabrication of aluminium doped zinc oxide piezoelectric thin ﬁlm on a silicon substrate for piezoelectric MEMS energy harvesters Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin Salleh, Hanim Othman, Raihan TP155 Chemical engineering Thin film piezoelectric materials play an essential role in micro electro mechanical system (MEMS)energy harvesting due to its low power requirement and high available energy densities. Non-ferroelectric piezoelectric materials such as ZnO and AlN are highly silicon compatible making it suitable for MEMS energy harvesters in self-powered microsystems. This work primarily describe the design, simulation and fabrication of aluminium doped zinc oxide (AZO) cantilever beam deposited on \100[ silicon substrate. AZO was chosen due its high piezoelectric coupling coefficient, ease of deposition and excellent bonding with silicon substrate. Doping of ZnO with Al has improved the electrical properties, conductivity and thermal stability. The proposed design operates in transversal mode (d31 mode) which was structured as a parallel plated capacitor using Si/Al/AZO/Al layers. The highlight of this work is the successful design and fabrication of Al/AZO/Al on\100[silicon as the substrate to make the device CMOS compatible for electronic functionality integration. Design and finite element modeling was conducted using COMSOLTM software to estimate the resonance frequency. RF Magnetron sputtering was chosen as the deposition method for aluminium and AZO. Material characterization was performed using X-ray diffraction and field emission scanning electron microscopy to evaluate the piezoelectric qualities, surface morphology and the cross section. The fabricated energy harvester generated 1.61 V open circuit output voltage at 7.77 MHz resonance frequency.The experimental results agreed with the simulation results. The measured output voltage is sufficient for low power wireless sensor nodes as an alternative power sources to traditional chemical batteries Springer Berlin / Heidelberg 2012-11 Article PeerReviewed application/pdf en http://irep.iium.edu.my/25085/1/25085.pdf Md Ralib @ Md Raghib, Aliza 'Aini and Nordin, Anis Nurashikin and Salleh, Hanim and Othman, Raihan (2012) Fabrication of aluminium doped zinc oxide piezoelectric thin ﬁlm on a silicon substrate for piezoelectric MEMS energy harvesters. Microsystems Technologies, 18 (11). pp. 1761-1769. ISSN 1432-1858 (O), 0946-7076 (P) (In Press) http://link.springer.com/article/10.1007/s00542-012-1550-9 10.1007/s00542-012-1550-9
repository_type	Digital Repository
institution_category	Local University
institution	International Islamic University Malaysia
building	IIUM Repository
collection	Online Access
language	English
topic	TP155 Chemical engineering
spellingShingle	TP155 Chemical engineering Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin Salleh, Hanim Othman, Raihan Fabrication of aluminium doped zinc oxide piezoelectric thin ﬁlm on a silicon substrate for piezoelectric MEMS energy harvesters
description	Thin film piezoelectric materials play an essential role in micro electro mechanical system (MEMS)energy harvesting due to its low power requirement and high available energy densities. Non-ferroelectric piezoelectric materials such as ZnO and AlN are highly silicon compatible making it suitable for MEMS energy harvesters in self-powered microsystems. This work primarily describe the design, simulation and fabrication of aluminium doped zinc oxide (AZO) cantilever beam deposited on \100[ silicon substrate. AZO was chosen due its high piezoelectric coupling coefficient, ease of deposition and excellent bonding with silicon substrate. Doping of ZnO with Al has improved the electrical properties, conductivity and thermal stability. The proposed design operates in transversal mode (d31 mode) which was structured as a parallel plated capacitor using Si/Al/AZO/Al layers. The highlight of this work is the successful design and fabrication of Al/AZO/Al on\100[silicon as the substrate to make the device CMOS compatible for electronic functionality integration. Design and finite element modeling was conducted using COMSOLTM software to estimate the resonance frequency. RF Magnetron sputtering was chosen as the deposition method for aluminium and AZO. Material characterization was performed using X-ray diffraction and field emission scanning electron microscopy to evaluate the piezoelectric qualities, surface morphology and the cross section. The fabricated energy harvester generated 1.61 V open circuit output voltage at 7.77 MHz resonance frequency.The experimental results agreed with the simulation results. The measured output voltage is sufficient for low power wireless sensor nodes as an alternative power sources to traditional chemical batteries
format	Article
author	Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin Salleh, Hanim Othman, Raihan
author_facet	Md Ralib @ Md Raghib, Aliza 'Aini Nordin, Anis Nurashikin Salleh, Hanim Othman, Raihan
author_sort	Md Ralib @ Md Raghib, Aliza 'Aini
title	Fabrication of aluminium doped zinc oxide piezoelectric thin ﬁlm on a silicon substrate for piezoelectric MEMS energy harvesters
title_short	Fabrication of aluminium doped zinc oxide piezoelectric thin ﬁlm on a silicon substrate for piezoelectric MEMS energy harvesters
title_full	Fabrication of aluminium doped zinc oxide piezoelectric thin ﬁlm on a silicon substrate for piezoelectric MEMS energy harvesters
title_fullStr	Fabrication of aluminium doped zinc oxide piezoelectric thin ﬁlm on a silicon substrate for piezoelectric MEMS energy harvesters
title_full_unstemmed	Fabrication of aluminium doped zinc oxide piezoelectric thin ﬁlm on a silicon substrate for piezoelectric MEMS energy harvesters
title_sort	fabrication of aluminium doped zinc oxide piezoelectric thin ﬁlm on a silicon substrate for piezoelectric mems energy harvesters
publisher	Springer Berlin / Heidelberg
publishDate	2012
url	http://irep.iium.edu.my/25085/ http://irep.iium.edu.my/25085/ http://irep.iium.edu.my/25085/ http://irep.iium.edu.my/25085/1/25085.pdf
first_indexed	2023-09-18T20:37:28Z
last_indexed	2023-09-18T20:37:28Z
_version_	1777409142045016064

Fabrication of aluminium doped zinc oxide piezoelectric thin ﬁlm on a silicon substrate for piezoelectric MEMS energy harvesters

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