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    “… constant base pressure of 1.604x10-4 Pa. Thermal oxidation of the deposited film was carried out at two…”
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    by Evans
    Published 1960
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    by Kang
    Published 2003
    Subjects: “…Metal oxide semiconductors, Complementary…”
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    “…The present research study deals with the preparation of tin oxide (SnO2) nanostructures using…”
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