Improving the Structural, Optical and Electrical Properties of ITO Nano-Layered Thin Films by Gas Flow Argon

Indium tin oxide (ITO) thin films of 150 nm thickness were deposited on quartz glass substrates by RF sputtering technique, followed by thermal annealing treatment. In this technique, the samples have been annealed at different temperature, 300ᴼC, 400ᴼC, 500ᴼC respectively in Argon...

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Main Authors:	Q. Z., Mehdi, Hegde, Gurumurthy, Mohamad Ashry, Jusoh, Al-Dabbagh, Jinan B., Ahmed, Naser Mahmoud
Format:	Article
Language:	English
Published:	Trans Tech Publications, Switzerland 2014
Subjects:	Q Science (General)
Online Access:	http://umpir.ump.edu.my/id/eprint/8087/ http://umpir.ump.edu.my/id/eprint/8087/ http://umpir.ump.edu.my/id/eprint/8087/ http://umpir.ump.edu.my/id/eprint/8087/1/fist-2014-gurumurthy-Improving_the_structural%2C_optical.PDF

id	ump-8087
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spelling	ump-80872019-11-27T02:50:58Z http://umpir.ump.edu.my/id/eprint/8087/ Improving the Structural, Optical and Electrical Properties of ITO Nano-Layered Thin Films by Gas Flow Argon Q. Z., Mehdi Hegde, Gurumurthy Mohamad Ashry, Jusoh Al-Dabbagh, Jinan B. Ahmed, Naser Mahmoud Q Science (General) Indium tin oxide (ITO) thin films of 150 nm thickness were deposited on quartz glass substrates by RF sputtering technique, followed by thermal annealing treatment. In this technique, the samples have been annealed at different temperature, 300ᴼC, 400ᴼC, 500ᴼC respectively in Argon gas flow. Structural and surface morphological properties were analyzed by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM) after annealing. The XRD showed a polycrystalline structure of ITO film with maximum peak intensity at 2θ= 30.54, <222>orientation without any change in the cubic structure. Continuous and homogeneous films obtained by the AFM after annealing treatment. The visible spectrum from the spectrophotometer showed high transparency between 81% and 95% in the. Increasing the annealing temperature yields evenly distributed pyramidal peaks shaped particles with low roughness. Resistance of ITO thin film was significantly improved from 8.75 kΩ to 1.96 kΩ after 10 minute from 300ᴼC to 500ᴼC annealing temperatures respectively under Argon gas flow. ITO films physical properties would be well improved by this method which is highly suitable for cost effective photonic devices. Trans Tech Publications, Switzerland 2014-08-10 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/8087/1/fist-2014-gurumurthy-Improving_the_structural%2C_optical.PDF Q. Z., Mehdi and Hegde, Gurumurthy and Mohamad Ashry, Jusoh and Al-Dabbagh, Jinan B. and Ahmed, Naser Mahmoud (2014) Improving the Structural, Optical and Electrical Properties of ITO Nano-Layered Thin Films by Gas Flow Argon. Advanced Materials Research, 974. pp. 116-120. ISSN 1022-6680 (print), 1662-8985 (online) http://www.scientific.net/AMR.974.116 DOI .10.4028/www.scientific.net/AMR.974.116
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	Q Science (General)
spellingShingle	Q Science (General) Q. Z., Mehdi Hegde, Gurumurthy Mohamad Ashry, Jusoh Al-Dabbagh, Jinan B. Ahmed, Naser Mahmoud Improving the Structural, Optical and Electrical Properties of ITO Nano-Layered Thin Films by Gas Flow Argon
description	Indium tin oxide (ITO) thin films of 150 nm thickness were deposited on quartz glass substrates by RF sputtering technique, followed by thermal annealing treatment. In this technique, the samples have been annealed at different temperature, 300ᴼC, 400ᴼC, 500ᴼC respectively in Argon gas flow. Structural and surface morphological properties were analyzed by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM) after annealing. The XRD showed a polycrystalline structure of ITO film with maximum peak intensity at 2θ= 30.54, <222>orientation without any change in the cubic structure. Continuous and homogeneous films obtained by the AFM after annealing treatment. The visible spectrum from the spectrophotometer showed high transparency between 81% and 95% in the. Increasing the annealing temperature yields evenly distributed pyramidal peaks shaped particles with low roughness. Resistance of ITO thin film was significantly improved from 8.75 kΩ to 1.96 kΩ after 10 minute from 300ᴼC to 500ᴼC annealing temperatures respectively under Argon gas flow. ITO films physical properties would be well improved by this method which is highly suitable for cost effective photonic devices.
format	Article
author	Q. Z., Mehdi Hegde, Gurumurthy Mohamad Ashry, Jusoh Al-Dabbagh, Jinan B. Ahmed, Naser Mahmoud
author_facet	Q. Z., Mehdi Hegde, Gurumurthy Mohamad Ashry, Jusoh Al-Dabbagh, Jinan B. Ahmed, Naser Mahmoud
author_sort	Q. Z., Mehdi
title	Improving the Structural, Optical and Electrical Properties of ITO Nano-Layered Thin Films by Gas Flow Argon
title_short	Improving the Structural, Optical and Electrical Properties of ITO Nano-Layered Thin Films by Gas Flow Argon
title_full	Improving the Structural, Optical and Electrical Properties of ITO Nano-Layered Thin Films by Gas Flow Argon
title_fullStr	Improving the Structural, Optical and Electrical Properties of ITO Nano-Layered Thin Films by Gas Flow Argon
title_full_unstemmed	Improving the Structural, Optical and Electrical Properties of ITO Nano-Layered Thin Films by Gas Flow Argon
title_sort	improving the structural, optical and electrical properties of ito nano-layered thin films by gas flow argon
publisher	Trans Tech Publications, Switzerland
publishDate	2014
url	http://umpir.ump.edu.my/id/eprint/8087/ http://umpir.ump.edu.my/id/eprint/8087/ http://umpir.ump.edu.my/id/eprint/8087/ http://umpir.ump.edu.my/id/eprint/8087/1/fist-2014-gurumurthy-Improving_the_structural%2C_optical.PDF
first_indexed	2023-09-18T22:05:23Z
last_indexed	2023-09-18T22:05:23Z
_version_	1777414672800022528

Improving the Structural, Optical and Electrical Properties of ITO Nano-Layered Thin Films by Gas Flow Argon

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