Tungsten Doped Titanium Dioxide Nanowires for High Efficiency Dye-Sensitized Solar Cells

Metal oxide semiconductors offering simultaneously high specific surface area and high electron mobility are actively sought for fabricating high performance nanoelectronic devices. The present study deals with synthesis of tungsten doped TiO2 (W:TiO2) nanowires (diameter [similar]50 nm) by electros...

Full description

Bibliographic Details
Main Authors:	Rajan, Jose, Archana, P. S., Gupta, Arunava, M. M., Yusoff
Format:	Article
Language:	English
Published:	Royal Society of Chemistry 2014
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/6246/ http://umpir.ump.edu.my/id/eprint/6246/ http://umpir.ump.edu.my/id/eprint/6246/ http://umpir.ump.edu.my/id/eprint/6246/1/pccp_Wdoped.pdf

id	ump-6246
recordtype	eprints
spelling	ump-62462018-07-27T08:21:05Z http://umpir.ump.edu.my/id/eprint/6246/ Tungsten Doped Titanium Dioxide Nanowires for High Efficiency Dye-Sensitized Solar Cells Rajan, Jose Archana, P. S. Gupta, Arunava M. M., Yusoff TK Electrical engineering. Electronics Nuclear engineering Metal oxide semiconductors offering simultaneously high specific surface area and high electron mobility are actively sought for fabricating high performance nanoelectronic devices. The present study deals with synthesis of tungsten doped TiO2 (W:TiO2) nanowires (diameter [similar]50 nm) by electrospinning and evaluation of their performance in dye-sensitized solar cells (DSCs). Similarity in the ionic radii between W6+ and Ti4+ and availability of two free electrons per dopant are the rationale for the present study. Materials were characterized by X-ray diffraction, scanning and transmission electron microscopy, X-ray fluorescence measurements, and absorption spectroscopy. Nanowires containing 2 at% W:TiO2 gave 90% higher short circuit current density (JSC) ([similar]15.39 mA cm−2) in DSCs with a nominal increase in the open circuit voltage compared with that of the undoped analogue (JSC [similar]8.1 mA cm−2). The results are validated by multiple techniques employing absorption spectroscopy, electrochemical impedance spectroscopy and open circuit voltage decay. The above studies show that the observed increments resulted from increased dye-loading, electron density, and electron lifetime in tungsten doped samples. Royal Society of Chemistry 2014-03-04 Article PeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/6246/1/pccp_Wdoped.pdf Rajan, Jose and Archana, P. S. and Gupta, Arunava and M. M., Yusoff (2014) Tungsten Doped Titanium Dioxide Nanowires for High Efficiency Dye-Sensitized Solar Cells. Physical Chemistry Chemical Physics, 16. pp. 7448-7454. ISSN 1463-9076 (print), 1463-9084 (online) http://pubs.rsc.org/en/content/articlelanding/2014/cp/c4cp00034j#!divAbstract DOI: 10.1039/C4CP00034J
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Rajan, Jose Archana, P. S. Gupta, Arunava M. M., Yusoff Tungsten Doped Titanium Dioxide Nanowires for High Efficiency Dye-Sensitized Solar Cells
description	Metal oxide semiconductors offering simultaneously high specific surface area and high electron mobility are actively sought for fabricating high performance nanoelectronic devices. The present study deals with synthesis of tungsten doped TiO2 (W:TiO2) nanowires (diameter [similar]50 nm) by electrospinning and evaluation of their performance in dye-sensitized solar cells (DSCs). Similarity in the ionic radii between W6+ and Ti4+ and availability of two free electrons per dopant are the rationale for the present study. Materials were characterized by X-ray diffraction, scanning and transmission electron microscopy, X-ray fluorescence measurements, and absorption spectroscopy. Nanowires containing 2 at% W:TiO2 gave 90% higher short circuit current density (JSC) ([similar]15.39 mA cm−2) in DSCs with a nominal increase in the open circuit voltage compared with that of the undoped analogue (JSC [similar]8.1 mA cm−2). The results are validated by multiple techniques employing absorption spectroscopy, electrochemical impedance spectroscopy and open circuit voltage decay. The above studies show that the observed increments resulted from increased dye-loading, electron density, and electron lifetime in tungsten doped samples.
format	Article
author	Rajan, Jose Archana, P. S. Gupta, Arunava M. M., Yusoff
author_facet	Rajan, Jose Archana, P. S. Gupta, Arunava M. M., Yusoff
author_sort	Rajan, Jose
title	Tungsten Doped Titanium Dioxide Nanowires for High Efficiency Dye-Sensitized Solar Cells
title_short	Tungsten Doped Titanium Dioxide Nanowires for High Efficiency Dye-Sensitized Solar Cells
title_full	Tungsten Doped Titanium Dioxide Nanowires for High Efficiency Dye-Sensitized Solar Cells
title_fullStr	Tungsten Doped Titanium Dioxide Nanowires for High Efficiency Dye-Sensitized Solar Cells
title_full_unstemmed	Tungsten Doped Titanium Dioxide Nanowires for High Efficiency Dye-Sensitized Solar Cells
title_sort	tungsten doped titanium dioxide nanowires for high efficiency dye-sensitized solar cells
publisher	Royal Society of Chemistry
publishDate	2014
url	http://umpir.ump.edu.my/id/eprint/6246/ http://umpir.ump.edu.my/id/eprint/6246/ http://umpir.ump.edu.my/id/eprint/6246/ http://umpir.ump.edu.my/id/eprint/6246/1/pccp_Wdoped.pdf
first_indexed	2023-09-18T22:01:50Z
last_indexed	2023-09-18T22:01:50Z
_version_	1777414449993351168

Tungsten Doped Titanium Dioxide Nanowires for High Efficiency Dye-Sensitized Solar Cells

Similar Items