Morphology, Topography and Thickness of Copper Oxide Thin Films Deposited using Magnetron Sputtering Technique
Cupric Oxide (CuO) is one of the p-type metal oxide semiconductors that are suitable for use in gas sensing device. The copper oxide thin film was prepared on silicon wafer by sputtering of pure copper target at difference deposition time of 5 min, 10 min and 15 min using RF magnetron sputtering tec...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2013
|
| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/6238/ http://umpir.ump.edu.my/id/eprint/6238/ http://umpir.ump.edu.my/id/eprint/6238/1/Morphology%2C_Topography_and_Thickness_of_Copper.pdf |
| id |
ump-6238 |
|---|---|
| recordtype |
eprints |
| spelling |
ump-62382016-04-20T01:23:42Z http://umpir.ump.edu.my/id/eprint/6238/ Morphology, Topography and Thickness of Copper Oxide Thin Films Deposited using Magnetron Sputtering Technique Jia, Wei Low Nafarizal, Nayan Mohd Zainizan, Sahdan Mohd Khairul, Ahmad Ali Yeon, Md Shakaff Ammar, Zakaria Ahmad Faizal, Mohd Zain TS Manufactures TP Chemical technology Cupric Oxide (CuO) is one of the p-type metal oxide semiconductors that are suitable for use in gas sensing device. The copper oxide thin film was prepared on silicon wafer by sputtering of pure copper target at difference deposition time of 5 min, 10 min and 15 min using RF magnetron sputtering technique. Argon flow rate, oxygen flow rate, RF power and working pressure were fixed at 50 sccm, 8 sccm, 400 W and 22.5 mTorr, respectively. The influence of the deposition time towards the surface morphology, topography and thickness has been investigated. SEM and AFM analysis showed that the grain size of the films increases with the increase of deposition time. However, the surface structure of the films remains the same. In addition, it is noticed that when the deposition time increased, the surface of the films becomes rougher. The deposition rate was approximately 29 nm/min, and it was evaluated from the film thickness deposited at several times. 2013 Conference or Workshop Item PeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/6238/1/Morphology%2C_Topography_and_Thickness_of_Copper.pdf Jia, Wei Low and Nafarizal, Nayan and Mohd Zainizan, Sahdan and Mohd Khairul, Ahmad and Ali Yeon, Md Shakaff and Ammar, Zakaria and Ahmad Faizal, Mohd Zain (2013) Morphology, Topography and Thickness of Copper Oxide Thin Films Deposited using Magnetron Sputtering Technique. In: Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium , Langkawi, The Jewel of Kedah. pp. 352-355.. http://dx.doi.org/10.1109/RSM.2013.6706548 |
| repository_type |
Digital Repository |
| institution_category |
Local University |
| institution |
Universiti Malaysia Pahang |
| building |
UMP Institutional Repository |
| collection |
Online Access |
| language |
English |
| topic |
TS Manufactures TP Chemical technology |
| spellingShingle |
TS Manufactures TP Chemical technology Jia, Wei Low Nafarizal, Nayan Mohd Zainizan, Sahdan Mohd Khairul, Ahmad Ali Yeon, Md Shakaff Ammar, Zakaria Ahmad Faizal, Mohd Zain Morphology, Topography and Thickness of Copper Oxide Thin Films Deposited using Magnetron Sputtering Technique |
| description |
Cupric Oxide (CuO) is one of the p-type metal oxide semiconductors that are suitable for use in gas sensing device. The copper oxide thin film was prepared on silicon wafer by sputtering of pure copper target at difference deposition time of 5 min, 10 min and 15 min using RF magnetron sputtering technique. Argon flow rate, oxygen flow rate, RF power and working pressure were fixed at 50 sccm, 8 sccm, 400 W and 22.5 mTorr, respectively. The influence of the deposition time towards the surface morphology, topography and thickness has been investigated. SEM and AFM analysis showed that the grain size of the films increases with the increase of deposition time. However, the surface structure of the films remains the same. In addition, it is noticed that when the deposition time increased, the surface of the films becomes rougher. The deposition rate was approximately 29 nm/min, and it was evaluated from the film thickness deposited at several times. |
| format |
Conference or Workshop Item |
| author |
Jia, Wei Low Nafarizal, Nayan Mohd Zainizan, Sahdan Mohd Khairul, Ahmad Ali Yeon, Md Shakaff Ammar, Zakaria Ahmad Faizal, Mohd Zain |
| author_facet |
Jia, Wei Low Nafarizal, Nayan Mohd Zainizan, Sahdan Mohd Khairul, Ahmad Ali Yeon, Md Shakaff Ammar, Zakaria Ahmad Faizal, Mohd Zain |
| author_sort |
Jia, Wei Low |
| title |
Morphology, Topography and Thickness of Copper Oxide Thin Films Deposited using Magnetron Sputtering Technique |
| title_short |
Morphology, Topography and Thickness of Copper Oxide Thin Films Deposited using Magnetron Sputtering Technique |
| title_full |
Morphology, Topography and Thickness of Copper Oxide Thin Films Deposited using Magnetron Sputtering Technique |
| title_fullStr |
Morphology, Topography and Thickness of Copper Oxide Thin Films Deposited using Magnetron Sputtering Technique |
| title_full_unstemmed |
Morphology, Topography and Thickness of Copper Oxide Thin Films Deposited using Magnetron Sputtering Technique |
| title_sort |
morphology, topography and thickness of copper oxide thin films deposited using magnetron sputtering technique |
| publishDate |
2013 |
| url |
http://umpir.ump.edu.my/id/eprint/6238/ http://umpir.ump.edu.my/id/eprint/6238/ http://umpir.ump.edu.my/id/eprint/6238/1/Morphology%2C_Topography_and_Thickness_of_Copper.pdf |
| first_indexed |
2023-09-18T22:01:49Z |
| last_indexed |
2023-09-18T22:01:49Z |
| _version_ |
1777414448978329600 |