Microcontroller based variable gate voltage for MOSFET

Metal Oxide Semiconductor Field Effect Transistor, MOSFETs are important and expansive switching devices in many power electronic circuit applications. MOSFETs require adequate pulses at its gate terminal in order to work properly. The amount of current going through the source and drain terminals i...

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Main Author: Nuripaizail, Ahmad
Format: Undergraduates Project Papers
Language:English
Published: 2008
Subjects:
Online Access:http://umpir.ump.edu.my/id/eprint/452/
http://umpir.ump.edu.my/id/eprint/452/1/NURIPAIZAL_BIN_AHMAD.pdf
id ump-452
recordtype eprints
spelling ump-4522015-03-03T06:03:30Z http://umpir.ump.edu.my/id/eprint/452/ Microcontroller based variable gate voltage for MOSFET Nuripaizail, Ahmad TK Electrical engineering. Electronics Nuclear engineering Metal Oxide Semiconductor Field Effect Transistor, MOSFETs are important and expansive switching devices in many power electronic circuit applications. MOSFETs require adequate pulses at its gate terminal in order to work properly. The amount of current going through the source and drain terminals is controlled by the magnitude pulses supplied. Normally, the magnitude of gate pulses is fixed and set to a nearly maximum allowable current of MOSFET. The problem with fixed type gate pulses is whenever overload occurs; the MOSFETs may experience very high current and thus working beyond their safe operating area (SOA). This situation might destroy the MOSFET. This project is implement base on PIC16F84A to generate PWM. The IR2109 use provide variable magnitude of PWM pulses and then to drive the based gate of the MOSFET. IR2109 is selected because of its ability to withstand high voltage input. 2008-11 Undergraduates Project Papers NonPeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/452/1/NURIPAIZAL_BIN_AHMAD.pdf Nuripaizail, Ahmad (2008) Microcontroller based variable gate voltage for MOSFET. Faculty of Electrical & Electronic Engineering, Universiti Malaysia Pahang.
repository_type Digital Repository
institution_category Local University
institution Universiti Malaysia Pahang
building UMP Institutional Repository
collection Online Access
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Nuripaizail, Ahmad
Microcontroller based variable gate voltage for MOSFET
description Metal Oxide Semiconductor Field Effect Transistor, MOSFETs are important and expansive switching devices in many power electronic circuit applications. MOSFETs require adequate pulses at its gate terminal in order to work properly. The amount of current going through the source and drain terminals is controlled by the magnitude pulses supplied. Normally, the magnitude of gate pulses is fixed and set to a nearly maximum allowable current of MOSFET. The problem with fixed type gate pulses is whenever overload occurs; the MOSFETs may experience very high current and thus working beyond their safe operating area (SOA). This situation might destroy the MOSFET. This project is implement base on PIC16F84A to generate PWM. The IR2109 use provide variable magnitude of PWM pulses and then to drive the based gate of the MOSFET. IR2109 is selected because of its ability to withstand high voltage input.
format Undergraduates Project Papers
author Nuripaizail, Ahmad
author_facet Nuripaizail, Ahmad
author_sort Nuripaizail, Ahmad
title Microcontroller based variable gate voltage for MOSFET
title_short Microcontroller based variable gate voltage for MOSFET
title_full Microcontroller based variable gate voltage for MOSFET
title_fullStr Microcontroller based variable gate voltage for MOSFET
title_full_unstemmed Microcontroller based variable gate voltage for MOSFET
title_sort microcontroller based variable gate voltage for mosfet
publishDate 2008
url http://umpir.ump.edu.my/id/eprint/452/
http://umpir.ump.edu.my/id/eprint/452/1/NURIPAIZAL_BIN_AHMAD.pdf
first_indexed 2023-09-18T21:52:40Z
last_indexed 2023-09-18T21:52:40Z
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