Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT)

Test circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal. IR2109 (MOSFET/IGBT Driver) will amplify the pulse signal from function generator due to DC voltage supply input amplitude. O...

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Main Author:	Bakhtiar, Ahmad
Format:	Undergraduates Project Papers
Language:	English English English
Published:	2009
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/379/ http://umpir.ump.edu.my/id/eprint/379/ http://umpir.ump.edu.my/id/eprint/379/1/Switching%20characteristic%20and%20analysis%20of%20insulated-gate%20bipolar%20transistor%20%28IGBT%29%20%28Table%20of%20content%29.pdf http://umpir.ump.edu.my/id/eprint/379/6/Switching%20characteristic%20and%20analysis%20of%20insulated-gate%20bipolar%20transistor%20%28IGBT%29%20%28Abstract%29.pdf http://umpir.ump.edu.my/id/eprint/379/12/Switching%20characteristic%20and%20analysis%20of%20insulated-gate%20bipolar%20transistor%20%28IGBT%29%20%28Chapter%201%29.pdf

id	ump-379
recordtype	eprints
spelling	ump-3792017-04-04T01:59:08Z http://umpir.ump.edu.my/id/eprint/379/ Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT) Bakhtiar, Ahmad TK Electrical engineering. Electronics Nuclear engineering Test circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal. IR2109 (MOSFET/IGBT Driver) will amplify the pulse signal from function generator due to DC voltage supply input amplitude. Output of IR2109 connected to IGBT gate in the test circuit and the circuit operates. In the test circuit, IGBT will turn on ad off due to the input PWM signal from the driver circuit. The event of the switching on and off of the IGBT observe and the data note down. The factors affecting the switching mode discuss. Power dissipation and losses in the circuit calculated due to the test. The result is then compared to IGBT-type IRG4IBC20UDPBF; IGBT with ultra fast soft recovery diode. Analysis and conclusion then been made to compare the pros and cons between the 2 tested IGBT due on term of selectivity. 2009-04 Undergraduates Project Papers NonPeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/379/1/Switching%20characteristic%20and%20analysis%20of%20insulated-gate%20bipolar%20transistor%20%28IGBT%29%20%28Table%20of%20content%29.pdf application/pdf en http://umpir.ump.edu.my/id/eprint/379/6/Switching%20characteristic%20and%20analysis%20of%20insulated-gate%20bipolar%20transistor%20%28IGBT%29%20%28Abstract%29.pdf application/pdf en http://umpir.ump.edu.my/id/eprint/379/12/Switching%20characteristic%20and%20analysis%20of%20insulated-gate%20bipolar%20transistor%20%28IGBT%29%20%28Chapter%201%29.pdf Bakhtiar, Ahmad (2009) Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT). Faculty of Electrical & Electronic Engineering, Universiti Malaysia Pahang. http://iportal.ump.edu.my/lib/item?id=chamo:40427&theme=UMP2
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English English English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Bakhtiar, Ahmad Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT)
description	Test circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal. IR2109 (MOSFET/IGBT Driver) will amplify the pulse signal from function generator due to DC voltage supply input amplitude. Output of IR2109 connected to IGBT gate in the test circuit and the circuit operates. In the test circuit, IGBT will turn on ad off due to the input PWM signal from the driver circuit. The event of the switching on and off of the IGBT observe and the data note down. The factors affecting the switching mode discuss. Power dissipation and losses in the circuit calculated due to the test. The result is then compared to IGBT-type IRG4IBC20UDPBF; IGBT with ultra fast soft recovery diode. Analysis and conclusion then been made to compare the pros and cons between the 2 tested IGBT due on term of selectivity.
format	Undergraduates Project Papers
author	Bakhtiar, Ahmad
author_facet	Bakhtiar, Ahmad
author_sort	Bakhtiar, Ahmad
title	Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT)
title_short	Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT)
title_full	Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT)
title_fullStr	Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT)
title_full_unstemmed	Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT)
title_sort	switching characteristic and analysis of insulated-gate bipolar transistor (igbt)
publishDate	2009
url	http://umpir.ump.edu.my/id/eprint/379/ http://umpir.ump.edu.my/id/eprint/379/ http://umpir.ump.edu.my/id/eprint/379/1/Switching%20characteristic%20and%20analysis%20of%20insulated-gate%20bipolar%20transistor%20%28IGBT%29%20%28Table%20of%20content%29.pdf http://umpir.ump.edu.my/id/eprint/379/6/Switching%20characteristic%20and%20analysis%20of%20insulated-gate%20bipolar%20transistor%20%28IGBT%29%20%28Abstract%29.pdf http://umpir.ump.edu.my/id/eprint/379/12/Switching%20characteristic%20and%20analysis%20of%20insulated-gate%20bipolar%20transistor%20%28IGBT%29%20%28Chapter%201%29.pdf
first_indexed	2023-09-18T21:52:31Z
last_indexed	2023-09-18T21:52:31Z
_version_	1777413863652720640

Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT)

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