A study on the impact of processing parameters on low-voltage power MOSFET

Power MOSFET is the most commonly used power device due to its low gate drive power and fast switching speed compared to the existing power biplar transistor.It features a vertical structure with source and drain on opposite sides of the wafer to support higher current and voltage.The performance of...

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Main Author:	Nur Aqilah, Othman
Format:	Undergraduates Project Papers
Language:	English
Published:	2012
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/3313/ http://umpir.ump.edu.my/id/eprint/3313/ http://umpir.ump.edu.my/id/eprint/3313/1/NUR_AQILAH_BINTI_OTHMAN.PDF

id	ump-3313
recordtype	eprints
spelling	ump-33132017-08-16T07:45:57Z http://umpir.ump.edu.my/id/eprint/3313/ A study on the impact of processing parameters on low-voltage power MOSFET Nur Aqilah, Othman TK Electrical engineering. Electronics Nuclear engineering Power MOSFET is the most commonly used power device due to its low gate drive power and fast switching speed compared to the existing power biplar transistor.It features a vertical structure with source and drain on opposite sides of the wafer to support higher current and voltage.The performance of power MOSFET is restricted by the internal resistance. A careful optimisation of the gate width (W G ) is required to minimise the internal resistance.Moreover, the doping concentration of N-epitaxial drift region and its thickness are chosen to obtain the desired breakdown voltage. In the device designed to support low voltage (<50 V), the doping concentration of the P-base region is comparable with the doping concentration of the N-drift region to support part of the applied voltage. The maximum doping concentration of the P-base region must be chosen to attain a threshold voltage for low voltage power MOSFET in the range of 1 - 2 V. In this study, the vital parameters in manufacturing the power VD-MOSFET,such as P-base and N-drift doping concentrations, thickness of N-drift region, and gate width are investigated. The impact of those parameters on the threshold voltage,breakdown voltage and internal on-resistance is recorded and analysed. The VD-MOSFET model used in this study is capable to withstand the breakdown voltage less than 30V. The model is simulated using 2D device and process simulation software from SILVACO; ATLAS and ATHENA. In the simulation, one parameter is varied, while the rest are kept constant.It is shown that, P-base doping concentration is significant in determining the threshold voltage.The threshold voltage is proportional to the P-base doping concentration.On the other hand, the breakdown voltage is inversely proportional to the N-drift doping concentration.Thicker N-drift region may support higher breakdown voltage, but will increase the internal on-resistance. 2012-04 Undergraduates Project Papers NonPeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/3313/1/NUR_AQILAH_BINTI_OTHMAN.PDF Nur Aqilah, Othman (2012) A study on the impact of processing parameters on low-voltage power MOSFET. Faculty of Engineering , Universiti Malaya. http://iportal.ump.edu.my/lib/item?id=chamo:59787&theme=UMP2
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Nur Aqilah, Othman A study on the impact of processing parameters on low-voltage power MOSFET
description	Power MOSFET is the most commonly used power device due to its low gate drive power and fast switching speed compared to the existing power biplar transistor.It features a vertical structure with source and drain on opposite sides of the wafer to support higher current and voltage.The performance of power MOSFET is restricted by the internal resistance. A careful optimisation of the gate width (W G ) is required to minimise the internal resistance.Moreover, the doping concentration of N-epitaxial drift region and its thickness are chosen to obtain the desired breakdown voltage. In the device designed to support low voltage (<50 V), the doping concentration of the P-base region is comparable with the doping concentration of the N-drift region to support part of the applied voltage. The maximum doping concentration of the P-base region must be chosen to attain a threshold voltage for low voltage power MOSFET in the range of 1 - 2 V. In this study, the vital parameters in manufacturing the power VD-MOSFET,such as P-base and N-drift doping concentrations, thickness of N-drift region, and gate width are investigated. The impact of those parameters on the threshold voltage,breakdown voltage and internal on-resistance is recorded and analysed. The VD-MOSFET model used in this study is capable to withstand the breakdown voltage less than 30V. The model is simulated using 2D device and process simulation software from SILVACO; ATLAS and ATHENA. In the simulation, one parameter is varied, while the rest are kept constant.It is shown that, P-base doping concentration is significant in determining the threshold voltage.The threshold voltage is proportional to the P-base doping concentration.On the other hand, the breakdown voltage is inversely proportional to the N-drift doping concentration.Thicker N-drift region may support higher breakdown voltage, but will increase the internal on-resistance.
format	Undergraduates Project Papers
author	Nur Aqilah, Othman
author_facet	Nur Aqilah, Othman
author_sort	Nur Aqilah, Othman
title	A study on the impact of processing parameters on low-voltage power MOSFET
title_short	A study on the impact of processing parameters on low-voltage power MOSFET
title_full	A study on the impact of processing parameters on low-voltage power MOSFET
title_fullStr	A study on the impact of processing parameters on low-voltage power MOSFET
title_full_unstemmed	A study on the impact of processing parameters on low-voltage power MOSFET
title_sort	study on the impact of processing parameters on low-voltage power mosfet
publishDate	2012
url	http://umpir.ump.edu.my/id/eprint/3313/ http://umpir.ump.edu.my/id/eprint/3313/ http://umpir.ump.edu.my/id/eprint/3313/1/NUR_AQILAH_BINTI_OTHMAN.PDF
first_indexed	2023-09-18T21:57:31Z
last_indexed	2023-09-18T21:57:31Z
_version_	1777414177867956224

A study on the impact of processing parameters on low-voltage power MOSFET

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