Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT

Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT

This paper investigates the temperature sensitivity and electrical characteristics of Silicon Nanowire Transistor (SiNWT) and Germanium Nanowire Transistor (GeNWT) depending on variable channel length (Lg). It also studies the possibility of using them as a temperature nanosensor. The MuGFET simulat...

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Main Authors: AlAriqi, Hani Taha, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Format: Article
Language:English
Published: University of Bahrain 2020
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/27207/
http://umpir.ump.edu.my/id/eprint/27207/
http://umpir.ump.edu.my/id/eprint/27207/
http://umpir.ump.edu.my/id/eprint/27207/1/Channel%20Length-Based%20Comparative%20Analysis%20of%20Temperature.pdf
id ump-27207
recordtype eprints
spelling ump-272072020-01-03T02:54:22Z http://umpir.ump.edu.my/id/eprint/27207/ Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT AlAriqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap TK Electrical engineering. Electronics Nuclear engineering This paper investigates the temperature sensitivity and electrical characteristics of Silicon Nanowire Transistor (SiNWT) and Germanium Nanowire Transistor (GeNWT) depending on variable channel length (Lg). It also studies the possibility of using them as a temperature nanosensor. The MuGFET simulation tool was exploited to investigate the characteristics of the considered nanowire transistors. Current-voltage characteristics with different values of temperature with channel length [Lg = 25, 45, 65, 85 and 105 nanometer (nm)], were simulated. MOS diode mode connection suggested measuring the temperature sensitivity of SiNWT and GeNWT too. Three (3) electrical characteristics namely; (i) Subthreshold Swing (SS), (ii) Threshold voltage (VT), and (iii) Drain-induced barrier lowering (DIBL) were evaluated and compared for both NWTs. The obtained results show that SiNWT achieved a better temperature sensitivity with channel length range between 25 nm to 105 nm at operation voltage (VDD) range 1 V to 5 V nm. It is very clear that the temperature sensitivity increased remarkably by increasing channel length for both of SiNWT and GeNWT as well, but in SiNWT the sensitivity is more steady compared to GeNWT that showing less sensitivity. Moreover, SiNWT shows better result in terms of electrical performance metrics for various channel length at T = 300 K comparing with GeNWT. University of Bahrain 2020 Article PeerReviewed pdf en cc_by_nc_nd_4 http://umpir.ump.edu.my/id/eprint/27207/1/Channel%20Length-Based%20Comparative%20Analysis%20of%20Temperature.pdf AlAriqi, Hani Taha and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2020) Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT. International Journal of Computing and Digital Systems, 9 (1). pp. 87-95. ISSN 2210-142X https://journal.uob.edu.bh/handle/123456789/3701 http://dx.doi.org/10.12785/ijcds/090109
repository_type Digital Repository
institution_category Local University
institution Universiti Malaysia Pahang
building UMP Institutional Repository
collection Online Access
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
AlAriqi, Hani Taha
Jabbar, Waheb A.
Hashim, Yasir
Hadi, Manap
Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT
description This paper investigates the temperature sensitivity and electrical characteristics of Silicon Nanowire Transistor (SiNWT) and Germanium Nanowire Transistor (GeNWT) depending on variable channel length (Lg). It also studies the possibility of using them as a temperature nanosensor. The MuGFET simulation tool was exploited to investigate the characteristics of the considered nanowire transistors. Current-voltage characteristics with different values of temperature with channel length [Lg = 25, 45, 65, 85 and 105 nanometer (nm)], were simulated. MOS diode mode connection suggested measuring the temperature sensitivity of SiNWT and GeNWT too. Three (3) electrical characteristics namely; (i) Subthreshold Swing (SS), (ii) Threshold voltage (VT), and (iii) Drain-induced barrier lowering (DIBL) were evaluated and compared for both NWTs. The obtained results show that SiNWT achieved a better temperature sensitivity with channel length range between 25 nm to 105 nm at operation voltage (VDD) range 1 V to 5 V nm. It is very clear that the temperature sensitivity increased remarkably by increasing channel length for both of SiNWT and GeNWT as well, but in SiNWT the sensitivity is more steady compared to GeNWT that showing less sensitivity. Moreover, SiNWT shows better result in terms of electrical performance metrics for various channel length at T = 300 K comparing with GeNWT.
format Article
author AlAriqi, Hani Taha
Jabbar, Waheb A.
Hashim, Yasir
Hadi, Manap
author_facet AlAriqi, Hani Taha
Jabbar, Waheb A.
Hashim, Yasir
Hadi, Manap
author_sort AlAriqi, Hani Taha
title Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT
title_short Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT
title_full Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT
title_fullStr Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT
title_full_unstemmed Channel Length-Based Comparative Analysis of Temperature and Electrical Characteristics for SiNWT and GeNWT
title_sort channel length-based comparative analysis of temperature and electrical characteristics for sinwt and genwt
publisher University of Bahrain
publishDate 2020
url http://umpir.ump.edu.my/id/eprint/27207/
http://umpir.ump.edu.my/id/eprint/27207/
http://umpir.ump.edu.my/id/eprint/27207/
http://umpir.ump.edu.my/id/eprint/27207/1/Channel%20Length-Based%20Comparative%20Analysis%20of%20Temperature.pdf
first_indexed 2023-09-18T22:42:41Z
last_indexed 2023-09-18T22:42:41Z
_version_ 1777417019889549312

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