Characterization of silicon nanowire transistor

This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the diameter (D.ch) of channel. In addition, it also investigates the possibility of utilizing SiNWT as a Nano- temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensiv...

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Main Authors:	Al Ariqi, Hani Taha, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Format:	Article
Language:	English
Published:	Universitas Ahmad Dahlan 2019
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/26234/ http://umpir.ump.edu.my/id/eprint/26234/ http://umpir.ump.edu.my/id/eprint/26234/ http://umpir.ump.edu.my/id/eprint/26234/1/Characterization%20of%20silicon%20nanowire%20transistor.pdf

id	ump-26234
recordtype	eprints
spelling	ump-262342019-10-25T09:03:04Z http://umpir.ump.edu.my/id/eprint/26234/ Characterization of silicon nanowire transistor Al Ariqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap TK Electrical engineering. Electronics Nuclear engineering This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the diameter (D.ch) of channel. In addition, it also investigates the possibility of utilizing SiNWT as a Nano- temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensive simulation to evaluate both electrical and temperature characteristics of SiNWT. Current-voltage characteristics with different values of temperature and with a varying diameter of the Nano wire channel (D.ch = 80, 40, 20 and 10 nm), were simulated. Diode operating mode connection of the transistor is suggested for measuring the temperature sensitivity of SiNWT. As simulation results demonstrated, the best temperature sensitivity was occurred at lower temperature with increasing the channel diameter. We also illustrate the impact of varying temperature and channel diameter on electrical characteristics of SiNWT including, Subthreshold Swing (SS), Threshold voltage (V.th), and Drain-induced barrier lowering (DIBL), which were proportionally increased with the operating temperature. Universitas Ahmad Dahlan 2019 Article PeerReviewed pdf en cc_by_4 http://umpir.ump.edu.my/id/eprint/26234/1/Characterization%20of%20silicon%20nanowire%20transistor.pdf Al Ariqi, Hani Taha and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2019) Characterization of silicon nanowire transistor. Telkomnika, 17 (6). pp. 2860-2866. ISSN 1693-6930 http://www.journal.uad.ac.id/index.php/TELKOMNIKA/article/view/13084 http://dx.doi.org/10.12928/telkomnika.v17i6.13084
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Al Ariqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap Characterization of silicon nanowire transistor
description	This paper analyses the temperature sensitivity of Silicon Nanowire Transistor (SiNWT) depends on the diameter (D.ch) of channel. In addition, it also investigates the possibility of utilizing SiNWT as a Nano- temperature sensor. The MuGFET simulation tool has been utilized to conduct a comprehensive simulation to evaluate both electrical and temperature characteristics of SiNWT. Current-voltage characteristics with different values of temperature and with a varying diameter of the Nano wire channel (D.ch = 80, 40, 20 and 10 nm), were simulated. Diode operating mode connection of the transistor is suggested for measuring the temperature sensitivity of SiNWT. As simulation results demonstrated, the best temperature sensitivity was occurred at lower temperature with increasing the channel diameter. We also illustrate the impact of varying temperature and channel diameter on electrical characteristics of SiNWT including, Subthreshold Swing (SS), Threshold voltage (V.th), and Drain-induced barrier lowering (DIBL), which were proportionally increased with the operating temperature.
format	Article
author	Al Ariqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap
author_facet	Al Ariqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap
author_sort	Al Ariqi, Hani Taha
title	Characterization of silicon nanowire transistor
title_short	Characterization of silicon nanowire transistor
title_full	Characterization of silicon nanowire transistor
title_fullStr	Characterization of silicon nanowire transistor
title_full_unstemmed	Characterization of silicon nanowire transistor
title_sort	characterization of silicon nanowire transistor
publisher	Universitas Ahmad Dahlan
publishDate	2019
url	http://umpir.ump.edu.my/id/eprint/26234/ http://umpir.ump.edu.my/id/eprint/26234/ http://umpir.ump.edu.my/id/eprint/26234/ http://umpir.ump.edu.my/id/eprint/26234/1/Characterization%20of%20silicon%20nanowire%20transistor.pdf
first_indexed	2023-09-18T22:40:44Z
last_indexed	2023-09-18T22:40:44Z
_version_	1777416897072988160

Characterization of silicon nanowire transistor

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