A temperature characterization of (Si-FinFET) based on channel oxide thickness

This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness–based temperature characteristics is useful to optimi...

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Main Authors:	Atalla, Yousif, Hashim, Yasir, Abdul Nasir, Abd Ghafar, Jabbar, Waheb A.
Format:	Article
Language:	English
Published:	Universitas Ahmad Dahlan 2019
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/25657/ http://umpir.ump.edu.my/id/eprint/25657/ http://umpir.ump.edu.my/id/eprint/25657/ http://umpir.ump.edu.my/id/eprint/25657/1/A%20temperature%20characterization.pdf

id	ump-25657
recordtype	eprints
spelling	ump-256572019-08-16T08:12:31Z http://umpir.ump.edu.my/id/eprint/25657/ A temperature characterization of (Si-FinFET) based on channel oxide thickness Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar Jabbar, Waheb A. TK Electrical engineering. Electronics Nuclear engineering This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness–based temperature characteristics is useful to optimized electrical and temperature characteristics of FinFET. Current–voltage characteristics with different temperatures and gate oxide thickness values (Tox=1, 2, 3, 4, and 5 nm) are initially simulated, and the diode mode connection is considered to measure FinFET’s temperature sensitivity. Finding the best temperature sensitivity of FinFET is based on the largest change in current (ΔI) within a working voltage range of 0–5 V. According to the results, the temperature sensitivity of FinFET increases linearly with oxide thickness within the range of 1–5 nm, furthermore, the threshold voltage and drain-induced barrier lowering increase with increasing oxide thickness. Also, the subthreshold swing (SS) is close to the ideal value at the minimum oxide thickness (1 nm) then increases and diverges with increasing oxide thickness. So, the best oxide thickness (nearest SS value to the ideal one) of FinFET under the conditions described in this research is 1 nm. Universitas Ahmad Dahlan 2019 Article PeerReviewed pdf en cc_by_nc_4 http://umpir.ump.edu.my/id/eprint/25657/1/A%20temperature%20characterization.pdf Atalla, Yousif and Hashim, Yasir and Abdul Nasir, Abd Ghafar and Jabbar, Waheb A. (2019) A temperature characterization of (Si-FinFET) based on channel oxide thickness. TELKOMNIKA (Telecommunication Computing Electronics and Control), 17 (5). pp. 2475-2480. ISSN 1693-6930 http://journal.uad.ac.id/index.php/TELKOMNIKA/article/view/11798 http://dx.doi.org/10.12928/telkomnika.v17i5.11798
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar Jabbar, Waheb A. A temperature characterization of (Si-FinFET) based on channel oxide thickness
description	This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness–based temperature characteristics is useful to optimized electrical and temperature characteristics of FinFET. Current–voltage characteristics with different temperatures and gate oxide thickness values (Tox=1, 2, 3, 4, and 5 nm) are initially simulated, and the diode mode connection is considered to measure FinFET’s temperature sensitivity. Finding the best temperature sensitivity of FinFET is based on the largest change in current (ΔI) within a working voltage range of 0–5 V. According to the results, the temperature sensitivity of FinFET increases linearly with oxide thickness within the range of 1–5 nm, furthermore, the threshold voltage and drain-induced barrier lowering increase with increasing oxide thickness. Also, the subthreshold swing (SS) is close to the ideal value at the minimum oxide thickness (1 nm) then increases and diverges with increasing oxide thickness. So, the best oxide thickness (nearest SS value to the ideal one) of FinFET under the conditions described in this research is 1 nm.
format	Article
author	Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar Jabbar, Waheb A.
author_facet	Atalla, Yousif Hashim, Yasir Abdul Nasir, Abd Ghafar Jabbar, Waheb A.
author_sort	Atalla, Yousif
title	A temperature characterization of (Si-FinFET) based on channel oxide thickness
title_short	A temperature characterization of (Si-FinFET) based on channel oxide thickness
title_full	A temperature characterization of (Si-FinFET) based on channel oxide thickness
title_fullStr	A temperature characterization of (Si-FinFET) based on channel oxide thickness
title_full_unstemmed	A temperature characterization of (Si-FinFET) based on channel oxide thickness
title_sort	temperature characterization of (si-finfet) based on channel oxide thickness
publisher	Universitas Ahmad Dahlan
publishDate	2019
url	http://umpir.ump.edu.my/id/eprint/25657/ http://umpir.ump.edu.my/id/eprint/25657/ http://umpir.ump.edu.my/id/eprint/25657/ http://umpir.ump.edu.my/id/eprint/25657/1/A%20temperature%20characterization.pdf
first_indexed	2023-09-18T22:39:31Z
last_indexed	2023-09-18T22:39:31Z
_version_	1777416821080588288

A temperature characterization of (Si-FinFET) based on channel oxide thickness

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