Temperature characteristics of silicon nanowire transistor depending on oxide thickness

Among various sensing and monitoring techniques, sensors based on field effect transistors (FETs) have attracted considerable attention from both industry and academia. Owing to their unique characteristics such as small size, light weight, low cost, flexibility, fast response, stability, and abilit...

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Main Authors:	AlAriqi, Hani Taha, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Format:	Article
Language:	English
Published:	Sumy State University 2019
Subjects:	T Technology (General)
Online Access:	http://umpir.ump.edu.my/id/eprint/25347/ http://umpir.ump.edu.my/id/eprint/25347/ http://umpir.ump.edu.my/id/eprint/25347/ http://umpir.ump.edu.my/id/eprint/25347/1/Temperature%20characteristics%20of%20silicon%20nanowire%20transistor.pdf

id	ump-25347
recordtype	eprints
spelling	ump-253472019-07-12T03:03:39Z http://umpir.ump.edu.my/id/eprint/25347/ Temperature characteristics of silicon nanowire transistor depending on oxide thickness AlAriqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap T Technology (General) Among various sensing and monitoring techniques, sensors based on field effect transistors (FETs) have attracted considerable attention from both industry and academia. Owing to their unique characteristics such as small size, light weight, low cost, flexibility, fast response, stability, and ability for further downscaling, silicon nanowire field effect transistor (SiNW-FET) can serve as an ideal nanosensor. It is the most likely successor to FET-based nanoscale devices. However, as the dimensions (channel length and diameter) of SiNWT channel are shrinking down, electrical and temperature characteristics of SiNWTs should be affected, thereby degrading transistor performance. Although applications of SiNWTs as biological and/or chemical sensors have been extensively explored in the literature, less attention has been devoted to utilize such transistors as temperature sensors. Therefore, this paper characterizes the temperature sensitivity of SiNWT depending on the channel oxide thickness and also presents the possibility of using it as a nano-temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire. Current-voltage characteristics with different values of temperature and with different thickness of the nanowire gate (oxide thickness (TOX) = 1, 2, 3, 4, and 5 nm), were simulated. Metaloxide- semiconductor (MOS) diode mode connection was suggested for measuring the temperature sensitivity of SiNWT. Several operating voltages (0.25 to 5 V) with various working temperature (250 to 450 K) were investigated. The obtained results show that the highest temperature sensitivity was achieved by increasing oxide thickness to 5 nm. The impact of the considered temperature on SiNWT characteristics demonstrates the possibility of utilizing it as a temperature nanosensor. Sumy State University 2019 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/25347/1/Temperature%20characteristics%20of%20silicon%20nanowire%20transistor.pdf AlAriqi, Hani Taha and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2019) Temperature characteristics of silicon nanowire transistor depending on oxide thickness. Journal of Nano- and Electronic Physics, 11 (3). pp. 1-4. ISSN 2077-6772 https://doi.org/10.21272/jnep.11(3).03027 https://doi.org/10.21272/jnep.11(3).03027
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	T Technology (General)
spellingShingle	T Technology (General) AlAriqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap Temperature characteristics of silicon nanowire transistor depending on oxide thickness
description	Among various sensing and monitoring techniques, sensors based on field effect transistors (FETs) have attracted considerable attention from both industry and academia. Owing to their unique characteristics such as small size, light weight, low cost, flexibility, fast response, stability, and ability for further downscaling, silicon nanowire field effect transistor (SiNW-FET) can serve as an ideal nanosensor. It is the most likely successor to FET-based nanoscale devices. However, as the dimensions (channel length and diameter) of SiNWT channel are shrinking down, electrical and temperature characteristics of SiNWTs should be affected, thereby degrading transistor performance. Although applications of SiNWTs as biological and/or chemical sensors have been extensively explored in the literature, less attention has been devoted to utilize such transistors as temperature sensors. Therefore, this paper characterizes the temperature sensitivity of SiNWT depending on the channel oxide thickness and also presents the possibility of using it as a nano-temperature sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the nanowire. Current-voltage characteristics with different values of temperature and with different thickness of the nanowire gate (oxide thickness (TOX) = 1, 2, 3, 4, and 5 nm), were simulated. Metaloxide- semiconductor (MOS) diode mode connection was suggested for measuring the temperature sensitivity of SiNWT. Several operating voltages (0.25 to 5 V) with various working temperature (250 to 450 K) were investigated. The obtained results show that the highest temperature sensitivity was achieved by increasing oxide thickness to 5 nm. The impact of the considered temperature on SiNWT characteristics demonstrates the possibility of utilizing it as a temperature nanosensor.
format	Article
author	AlAriqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap
author_facet	AlAriqi, Hani Taha Jabbar, Waheb A. Hashim, Yasir Hadi, Manap
author_sort	AlAriqi, Hani Taha
title	Temperature characteristics of silicon nanowire transistor depending on oxide thickness
title_short	Temperature characteristics of silicon nanowire transistor depending on oxide thickness
title_full	Temperature characteristics of silicon nanowire transistor depending on oxide thickness
title_fullStr	Temperature characteristics of silicon nanowire transistor depending on oxide thickness
title_full_unstemmed	Temperature characteristics of silicon nanowire transistor depending on oxide thickness
title_sort	temperature characteristics of silicon nanowire transistor depending on oxide thickness
publisher	Sumy State University
publishDate	2019
url	http://umpir.ump.edu.my/id/eprint/25347/ http://umpir.ump.edu.my/id/eprint/25347/ http://umpir.ump.edu.my/id/eprint/25347/ http://umpir.ump.edu.my/id/eprint/25347/1/Temperature%20characteristics%20of%20silicon%20nanowire%20transistor.pdf
first_indexed	2023-09-18T22:38:52Z
last_indexed	2023-09-18T22:38:52Z
_version_	1777416779644010496

Temperature characteristics of silicon nanowire transistor depending on oxide thickness

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