Optimal nano dimensional channel of GaAs-FinFET transistor
This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evalua...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
IEEE
2018
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/25345/ http://umpir.ump.edu.my/id/eprint/25345/ http://umpir.ump.edu.my/id/eprint/25345/1/57.1%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf http://umpir.ump.edu.my/id/eprint/25345/2/57.%20Optimal%20nano%20dimensional%20channel%20of%20GaAs-FinFET%20transistor.pdf |
| Summary: | This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evaluated in terms of various electrical characteristics (I ON /I OFF , SS, VT and DIBL). The MuGFET simulation tool is used in this study to simulate the current-voltage characteristics for different dimensions of channel. According to highest I ON /I OFF ratio, and nearest SS to the ideal SS, the best channel dimensions of GaAs-FinFET are designed. The results show that the best performance can be achieved with the lowest scaling factor, K of 0.25, when the length is 40 nm, the width is 3 nm, and the oxide thickness is 1 nm. |
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