Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor

This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evalua...

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Main Authors:	Mahmood, Ahmed, Jabbar, Waheb A., Saad, Wasan Kadhim, Hashim, Yasir, Hadi, Manap
Format:	Conference or Workshop Item
Language:	English
Published:	IEEE 2018
Subjects:	T Technology (General)
Online Access:	http://umpir.ump.edu.my/id/eprint/25088/ http://umpir.ump.edu.my/id/eprint/25088/ http://umpir.ump.edu.my/id/eprint/25088/1/Optimal%20Nano-Dimensional%20Channel%20of%20GaAs-FinFET%20Transistor.pdf

id	ump-25088
recordtype	eprints
spelling	ump-250882019-06-18T01:58:30Z http://umpir.ump.edu.my/id/eprint/25088/ Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor Mahmood, Ahmed Jabbar, Waheb A. Saad, Wasan Kadhim Hashim, Yasir Hadi, Manap T Technology (General) This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evaluated in terms of various electrical characteristics (I ON /I OFF , SS, VT and DIBL). The MuGFET simulation tool is used in this study to simulate the current-voltage characteristics for different dimensions of channel. According to highest I ON /I OFF ratio, and nearest SS to the ideal SS, the best channel dimensions of GaAs-FinFET are designed. The results show that the best performance can be achieved with the lowest scaling factor, K of 0.25, when the length is 40 nm, the width is 3 nm, and the oxide thickness is 1 nm. IEEE 2018 Conference or Workshop Item PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/25088/1/Optimal%20Nano-Dimensional%20Channel%20of%20GaAs-FinFET%20Transistor.pdf Mahmood, Ahmed and Jabbar, Waheb A. and Saad, Wasan Kadhim and Hashim, Yasir and Hadi, Manap (2018) Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor. In: IEEE Student Conference on Research and Development (SCOReD 2019), 26-28 November 2018 , Selangor, Malaysia. pp. 1-5.. ISBN 978-1-5386-9175-5 https://doi.org/10.1109/SCORED.2018.8710811
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	T Technology (General)
spellingShingle	T Technology (General) Mahmood, Ahmed Jabbar, Waheb A. Saad, Wasan Kadhim Hashim, Yasir Hadi, Manap Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor
description	This paper investigates the optimal nano-dimensions channel for Gallium Arsenide Fin Field Effect Transistor (GaAs-FinFET) based on I ON /I OFF ratio and subthreshold swing (SS). The impact of reducing channel dimensions (length, width, and oxide thickness) on GaAs-FinFET performance has been evaluated in terms of various electrical characteristics (I ON /I OFF , SS, VT and DIBL). The MuGFET simulation tool is used in this study to simulate the current-voltage characteristics for different dimensions of channel. According to highest I ON /I OFF ratio, and nearest SS to the ideal SS, the best channel dimensions of GaAs-FinFET are designed. The results show that the best performance can be achieved with the lowest scaling factor, K of 0.25, when the length is 40 nm, the width is 3 nm, and the oxide thickness is 1 nm.
format	Conference or Workshop Item
author	Mahmood, Ahmed Jabbar, Waheb A. Saad, Wasan Kadhim Hashim, Yasir Hadi, Manap
author_facet	Mahmood, Ahmed Jabbar, Waheb A. Saad, Wasan Kadhim Hashim, Yasir Hadi, Manap
author_sort	Mahmood, Ahmed
title	Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor
title_short	Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor
title_full	Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor
title_fullStr	Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor
title_full_unstemmed	Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor
title_sort	optimal nano-dimensional channel of gaas-finfet transistor
publisher	IEEE
publishDate	2018
url	http://umpir.ump.edu.my/id/eprint/25088/ http://umpir.ump.edu.my/id/eprint/25088/ http://umpir.ump.edu.my/id/eprint/25088/1/Optimal%20Nano-Dimensional%20Channel%20of%20GaAs-FinFET%20Transistor.pdf
first_indexed	2023-09-18T22:38:20Z
last_indexed	2023-09-18T22:38:20Z
_version_	1777416746576117760

Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor

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