Theoretical study of transport properties of nanoelectronics for sensor application

Experimental prediction of transport properties of semiconductor devices faces a challenge these days due to continuous device scaling. As nanoelectronics are scaled to nanometre scale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On...

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Main Author:	Ijeomah, Geoffrey Ugochukwu
Format:	Thesis
Language:	English
Published:	2018
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/25048/ http://umpir.ump.edu.my/id/eprint/25048/ http://umpir.ump.edu.my/id/eprint/25048/1/Theoretical%20study%20of%20transport%20properties%20of%20nanoelectronics.pdf

id	ump-25048
recordtype	eprints
spelling	ump-250482019-07-04T02:17:33Z http://umpir.ump.edu.my/id/eprint/25048/ Theoretical study of transport properties of nanoelectronics for sensor application Ijeomah, Geoffrey Ugochukwu TK Electrical engineering. Electronics Nuclear engineering Experimental prediction of transport properties of semiconductor devices faces a challenge these days due to continuous device scaling. As nanoelectronics are scaled to nanometre scale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate non-equilibrium Green function (NEGF) is hampered by the fact that it requires prohibitive amounts of memory and computation time. This work employs the Boltzmann Transport Equation (BTE) to investigate the transport properties of nanoelectronics, aiming to understand their sensing mechanism. Previous works on solving the BTE have employed either an approximate method or a stochastic method, both of which do not possess the requisite properties for practical device applications. Therefore, this work describes the direct theoretical solution of BTE for nanoelectronics that can be utilized for practical applications. This is achieved by employing powerful theoretical models to discretise the BTE both in energy and momentum without making any approximations on the transport integral or distribution function. This approach is not only fast but also has low memory requirements because it does not require direct storage of matrix elements. The complete spectrum of transport in nanoelectronics extending from Ohmic to high electric field through ballistic transmission is examined to delineate plethora of participating mean free paths (mfps). The transport for arbitrary values of electric field is based on BTE applied to experimental data on nanoelectronics extending from low to high field. In the limit of low field, the mobility expressions are obtained in terms of mfp that is distinctly shorter than the length of the sample. The results indicate that nanoelectronics predominantly operate in quasi-ballistic regime, where carrier transport becomes near ballistic across the channel near the source. The ohmic resistance was found to be quantized with a value of 6.453kΩ consistent with experimental observations with ballistic transmission almost unity as channel length shrinks below the scattering-limited mfp. The emission of a quantum was found to lower the saturation velocity that is independent of scattering and hence ballistic. Transition to ballistic regime was found to occur when channel length is reduced below the ballistic mfp that is shown to be extended version of long-channel mfp modified by injection from the contacts, yet the mobility degrades. This mobility degradation is shown to be the cause of resistance quantum in the low-channel-length limit. These findings have overwhelming implications in nanoelectronics sensor application. 2018-07 Thesis NonPeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/25048/1/Theoretical%20study%20of%20transport%20properties%20of%20nanoelectronics.pdf Ijeomah, Geoffrey Ugochukwu (2018) Theoretical study of transport properties of nanoelectronics for sensor application. PhD thesis, Universiti Malaysia Pahang. http://iportal.ump.edu.my/lib/item?id=chamo:105295&theme=UMP2
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Ijeomah, Geoffrey Ugochukwu Theoretical study of transport properties of nanoelectronics for sensor application
description	Experimental prediction of transport properties of semiconductor devices faces a challenge these days due to continuous device scaling. As nanoelectronics are scaled to nanometre scale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate non-equilibrium Green function (NEGF) is hampered by the fact that it requires prohibitive amounts of memory and computation time. This work employs the Boltzmann Transport Equation (BTE) to investigate the transport properties of nanoelectronics, aiming to understand their sensing mechanism. Previous works on solving the BTE have employed either an approximate method or a stochastic method, both of which do not possess the requisite properties for practical device applications. Therefore, this work describes the direct theoretical solution of BTE for nanoelectronics that can be utilized for practical applications. This is achieved by employing powerful theoretical models to discretise the BTE both in energy and momentum without making any approximations on the transport integral or distribution function. This approach is not only fast but also has low memory requirements because it does not require direct storage of matrix elements. The complete spectrum of transport in nanoelectronics extending from Ohmic to high electric field through ballistic transmission is examined to delineate plethora of participating mean free paths (mfps). The transport for arbitrary values of electric field is based on BTE applied to experimental data on nanoelectronics extending from low to high field. In the limit of low field, the mobility expressions are obtained in terms of mfp that is distinctly shorter than the length of the sample. The results indicate that nanoelectronics predominantly operate in quasi-ballistic regime, where carrier transport becomes near ballistic across the channel near the source. The ohmic resistance was found to be quantized with a value of 6.453kΩ consistent with experimental observations with ballistic transmission almost unity as channel length shrinks below the scattering-limited mfp. The emission of a quantum was found to lower the saturation velocity that is independent of scattering and hence ballistic. Transition to ballistic regime was found to occur when channel length is reduced below the ballistic mfp that is shown to be extended version of long-channel mfp modified by injection from the contacts, yet the mobility degrades. This mobility degradation is shown to be the cause of resistance quantum in the low-channel-length limit. These findings have overwhelming implications in nanoelectronics sensor application.
format	Thesis
author	Ijeomah, Geoffrey Ugochukwu
author_facet	Ijeomah, Geoffrey Ugochukwu
author_sort	Ijeomah, Geoffrey Ugochukwu
title	Theoretical study of transport properties of nanoelectronics for sensor application
title_short	Theoretical study of transport properties of nanoelectronics for sensor application
title_full	Theoretical study of transport properties of nanoelectronics for sensor application
title_fullStr	Theoretical study of transport properties of nanoelectronics for sensor application
title_full_unstemmed	Theoretical study of transport properties of nanoelectronics for sensor application
title_sort	theoretical study of transport properties of nanoelectronics for sensor application
publishDate	2018
url	http://umpir.ump.edu.my/id/eprint/25048/ http://umpir.ump.edu.my/id/eprint/25048/ http://umpir.ump.edu.my/id/eprint/25048/1/Theoretical%20study%20of%20transport%20properties%20of%20nanoelectronics.pdf
first_indexed	2023-09-18T22:38:15Z
last_indexed	2023-09-18T22:38:15Z
_version_	1777416741512544256

Theoretical study of transport properties of nanoelectronics for sensor application

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