Theoretical modelling of charge transport properties of individual single-wall carbon nanotubes

Experimental projection of transport properties of semiconductor devices faces a challenge nowadays. As devices scale to nanometre scale range, the classical transport equations used in current device simulators can no longer be applied. Conversely, the use of a more accurate and better non-equilibr...

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Main Authors:	Ijeomah, Geoffrey, Fahmi, Samsuri, Obite, Felix, Mohd Anwar, Zawawi
Format:	Article
Language:	English
Published:	Penerbit Universiti Malaysia Pahang 2018
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/24775/ http://umpir.ump.edu.my/id/eprint/24775/ http://umpir.ump.edu.my/id/eprint/24775/7/Theoretical%20modelling%20of%20charge%20transport%20properties%20of%20individual.pdf

id	ump-24775
recordtype	eprints
spelling	ump-247752019-06-11T08:33:42Z http://umpir.ump.edu.my/id/eprint/24775/ Theoretical modelling of charge transport properties of individual single-wall carbon nanotubes Ijeomah, Geoffrey Fahmi, Samsuri Obite, Felix Mohd Anwar, Zawawi TK Electrical engineering. Electronics Nuclear engineering Experimental projection of transport properties of semiconductor devices faces a challenge nowadays. As devices scale to nanometre scale range, the classical transport equations used in current device simulators can no longer be applied. Conversely, the use of a more accurate and better non-equilibrium green function (NEGF) is limited by the fact that it requires excessive quantum of memory and computational time, having quasi-separable matrices that are extremely convoluted to solve. This work exploits the Boltzmann Transport Equation (BTE) to assess the transport properties of carbon nanotubes. Previous works on solving the BTE have employed either a stochastic method or an approximate method, both of which do not possess the necessary properties for practical device applications. Therefore, this work represents the first direct theoretical solution of the BTE for one-dimensional carbon nanotubes that can be utilized for practical device applications. The complete spectrum of transport in CNTs extending from ohmic to high-field through ballistic transmission is examined to delineate plethora of transport properties. The transport for arbitrary values of the electric field is based on the BTE applied to experimental data on CNTs. In the limit of low field, the mobility expressions are obtained in terms of the mean free path (mfp) that is distinctly shorter than the length of the sample. The ohmic resistance is quantized a value of 6.453k-ohms consistent with experimental findings with transmission approaching unity as channel length shrinks below the carrier mfp. The emission of a quantum was observed to lower the saturation velocity that is independent of scattering and hence ballistic. Transition to ballistic domain was found to occur when the channel length is scaled below the ballistic limit that is shown to be the extended version of the long-channel mfp modulated by injections from the contacts, yet the mobility degrades. The mobility degradation is shown to be the cause of resistance quantum in the low-channel length limit. These findings are important in predicting the transport properties of low-dimensional CNTs. Penerbit Universiti Malaysia Pahang 2018-12 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/24775/7/Theoretical%20modelling%20of%20charge%20transport%20properties%20of%20individual.pdf Ijeomah, Geoffrey and Fahmi, Samsuri and Obite, Felix and Mohd Anwar, Zawawi (2018) Theoretical modelling of charge transport properties of individual single-wall carbon nanotubes. International Journal of Engineering Technology And Sciences (IJETS), 5 (3). pp. 14-34. ISSN 2462 - 1269 http://journal.ump.edu.my/ijets/article/view/1127
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Ijeomah, Geoffrey Fahmi, Samsuri Obite, Felix Mohd Anwar, Zawawi Theoretical modelling of charge transport properties of individual single-wall carbon nanotubes
description	Experimental projection of transport properties of semiconductor devices faces a challenge nowadays. As devices scale to nanometre scale range, the classical transport equations used in current device simulators can no longer be applied. Conversely, the use of a more accurate and better non-equilibrium green function (NEGF) is limited by the fact that it requires excessive quantum of memory and computational time, having quasi-separable matrices that are extremely convoluted to solve. This work exploits the Boltzmann Transport Equation (BTE) to assess the transport properties of carbon nanotubes. Previous works on solving the BTE have employed either a stochastic method or an approximate method, both of which do not possess the necessary properties for practical device applications. Therefore, this work represents the first direct theoretical solution of the BTE for one-dimensional carbon nanotubes that can be utilized for practical device applications. The complete spectrum of transport in CNTs extending from ohmic to high-field through ballistic transmission is examined to delineate plethora of transport properties. The transport for arbitrary values of the electric field is based on the BTE applied to experimental data on CNTs. In the limit of low field, the mobility expressions are obtained in terms of the mean free path (mfp) that is distinctly shorter than the length of the sample. The ohmic resistance is quantized a value of 6.453k-ohms consistent with experimental findings with transmission approaching unity as channel length shrinks below the carrier mfp. The emission of a quantum was observed to lower the saturation velocity that is independent of scattering and hence ballistic. Transition to ballistic domain was found to occur when the channel length is scaled below the ballistic limit that is shown to be the extended version of the long-channel mfp modulated by injections from the contacts, yet the mobility degrades. The mobility degradation is shown to be the cause of resistance quantum in the low-channel length limit. These findings are important in predicting the transport properties of low-dimensional CNTs.
format	Article
author	Ijeomah, Geoffrey Fahmi, Samsuri Obite, Felix Mohd Anwar, Zawawi
author_facet	Ijeomah, Geoffrey Fahmi, Samsuri Obite, Felix Mohd Anwar, Zawawi
author_sort	Ijeomah, Geoffrey
title	Theoretical modelling of charge transport properties of individual single-wall carbon nanotubes
title_short	Theoretical modelling of charge transport properties of individual single-wall carbon nanotubes
title_full	Theoretical modelling of charge transport properties of individual single-wall carbon nanotubes
title_fullStr	Theoretical modelling of charge transport properties of individual single-wall carbon nanotubes
title_full_unstemmed	Theoretical modelling of charge transport properties of individual single-wall carbon nanotubes
title_sort	theoretical modelling of charge transport properties of individual single-wall carbon nanotubes
publisher	Penerbit Universiti Malaysia Pahang
publishDate	2018
url	http://umpir.ump.edu.my/id/eprint/24775/ http://umpir.ump.edu.my/id/eprint/24775/ http://umpir.ump.edu.my/id/eprint/24775/7/Theoretical%20modelling%20of%20charge%20transport%20properties%20of%20individual.pdf
first_indexed	2023-09-18T22:37:42Z
last_indexed	2023-09-18T22:37:42Z
_version_	1777416706233204736

Theoretical modelling of charge transport properties of individual single-wall carbon nanotubes

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