Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions

Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors’ dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality...

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Main Authors:	Mahmood, Ahmed, Jabbar, Waheb A., Hashim, Yasir, Hadi, Manap
Format:	Article
Language:	English
Published:	Sumy State University (Sumy, Ukraine) 2019
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/24395/ http://umpir.ump.edu.my/id/eprint/24395/ http://umpir.ump.edu.my/id/eprint/24395/ http://umpir.ump.edu.my/id/eprint/24395/1/Electrical%20%D0%A1haracterization%20ofGe-FinFET%20Transistor.pdf

id	ump-24395
recordtype	eprints
spelling	ump-243952019-03-07T04:49:02Z http://umpir.ump.edu.my/id/eprint/24395/ Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap TK Electrical engineering. Electronics Nuclear engineering Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors’ dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality and enhanced performance of integrated circuits (ICs). However, reducing size of the conventional planar transistors would be exceptionally challenging due to leakages electrostatics and other fabrication issues. Fin Field Effect Transistor (FinFET) shows a great potential in scalability and manufacturability as a promising candidate and a successor to conventional planar devices in nanoscale technologies. The structure of FinFET provides superior electrical control over the channel conduction, thus it has attracted widespread interest of researchers in both academia and industry. However, aggressively scaling down of channel dimensions, will degrade the overall performance due to detrimental short channel effects. In this paper, we investigate the impact of downscaling of nano-channel dimensions of Germanium Fin Feld Effect Transistor (Ge-FinFET) on electrical characteristics of the transistor, namely; ION/IOFF ratio, Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to conduct a simulation study to achieve optimal channel dimensions by considering channel length (L), width (W), and oxide thickness (TOX) individually. In addition, the effects of simultaneous consideration of all dimensions by exploiting a scaling factor, K was evaluated. According to the obtained simulation results, the best performance of Ge-FinFET was achieved at a minimal scaling factor, K 0.25 with 5 nm channel length, 2.5 nm width, and 0.625 nm oxide thickness. Sumy State University (Sumy, Ukraine) 2019 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/24395/1/Electrical%20%D0%A1haracterization%20ofGe-FinFET%20Transistor.pdf Mahmood, Ahmed and Jabbar, Waheb A. and Hashim, Yasir and Hadi, Manap (2019) Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions. Journal Of Nano-And Electronic Physics, 11 (1). pp. 1-5. ISSN 2306-4277 https://doi.org/10.21272/jnep.11(1).01011 https://doi.org/10.21272/jnep.11(1).01011
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
description	Nano-electronic applications have benefited enormously from the great advancement in the emerging Nano-technology industry. The tremendous downscaling of the transistors’ dimensions has enabled the placement of over 100 million transistors on a single chip thus reduced cost, increased functionality and enhanced performance of integrated circuits (ICs). However, reducing size of the conventional planar transistors would be exceptionally challenging due to leakages electrostatics and other fabrication issues. Fin Field Effect Transistor (FinFET) shows a great potential in scalability and manufacturability as a promising candidate and a successor to conventional planar devices in nanoscale technologies. The structure of FinFET provides superior electrical control over the channel conduction, thus it has attracted widespread interest of researchers in both academia and industry. However, aggressively scaling down of channel dimensions, will degrade the overall performance due to detrimental short channel effects. In this paper, we investigate the impact of downscaling of nano-channel dimensions of Germanium Fin Feld Effect Transistor (Ge-FinFET) on electrical characteristics of the transistor, namely; ION/IOFF ratio, Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to conduct a simulation study to achieve optimal channel dimensions by considering channel length (L), width (W), and oxide thickness (TOX) individually. In addition, the effects of simultaneous consideration of all dimensions by exploiting a scaling factor, K was evaluated. According to the obtained simulation results, the best performance of Ge-FinFET was achieved at a minimal scaling factor, K 0.25 with 5 nm channel length, 2.5 nm width, and 0.625 nm oxide thickness.
format	Article
author	Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap
author_facet	Mahmood, Ahmed Jabbar, Waheb A. Hashim, Yasir Hadi, Manap
author_sort	Mahmood, Ahmed
title	Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
title_short	Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
title_full	Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
title_fullStr	Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
title_full_unstemmed	Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions
title_sort	electrical сharacterization of ge-finfet transistor based on nanoscale channel dimensions
publisher	Sumy State University (Sumy, Ukraine)
publishDate	2019
url	http://umpir.ump.edu.my/id/eprint/24395/ http://umpir.ump.edu.my/id/eprint/24395/ http://umpir.ump.edu.my/id/eprint/24395/ http://umpir.ump.edu.my/id/eprint/24395/1/Electrical%20%D0%A1haracterization%20ofGe-FinFET%20Transistor.pdf
first_indexed	2023-09-18T22:36:53Z
last_indexed	2023-09-18T22:36:53Z
_version_	1777416655122464768

Electrical Сharacterization of Ge-FinFET Transistor Based on Nanoscale Channel Dimensions

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