Structural, optical and electrical characteristics of sulfur incorporated ZnSe thin films

In the present study, polycrystalline materials of ZnSe1-xSx (x = 0, 0.25, 0.5, 0.75 and 1) were prepared by a conventional solid-state reaction method. Thin films of ZnSe1-xSx of about 1 μm have been produced using evaporation method. The importance of ZnSe1-xSx compound is the tunability of band g...

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Main Authors:	Shaaban, Essam R., Almohammedi, A., Yousef, El Sayed, Ali, Gomaa A. M., K. F., Chong, Adel, A., Ashour, A.
Format:	Article
Language:	English
Published:	Elsevier 2018
Subjects:	Q Science (General) T Technology (General)
Online Access:	http://umpir.ump.edu.my/id/eprint/22124/ http://umpir.ump.edu.my/id/eprint/22124/ http://umpir.ump.edu.my/id/eprint/22124/ http://umpir.ump.edu.my/id/eprint/22124/1/Structural%2C%20optical%20and%20electrical%20characteristics%20of%20sulfur1.pdf

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recordtype	eprints
spelling	ump-221242018-09-20T03:53:48Z http://umpir.ump.edu.my/id/eprint/22124/ Structural, optical and electrical characteristics of sulfur incorporated ZnSe thin films Shaaban, Essam R. Almohammedi, A. Yousef, El Sayed Ali, Gomaa A. M. K. F., Chong Adel, A. Ashour, A. Q Science (General) T Technology (General) In the present study, polycrystalline materials of ZnSe1-xSx (x = 0, 0.25, 0.5, 0.75 and 1) were prepared by a conventional solid-state reaction method. Thin films of ZnSe1-xSx of about 1 μm have been produced using evaporation method. The importance of ZnSe1-xSx compound is the tunability of band gap when incorporating S into the ZnSe. Adding S at the expense of Se in ZnSe to form Zn-Se-S, which has a wider energy gap window layer to permit more light to reach the junction of solar cell. Both of optical constants (n, k) and film thickness have been determined precisely in terms of envelop method. Optical absorption spectra showed that band gap values increase with increasing S content. The electrical conductivity of ZnSe1-xSx was studied and exhibit two type of variation versus temperature. The activation energy of linear portion of the low temperature range is lower than the activation energy of linear portion of high temperature range and it increases with increasing the sulfur content in all films in both temperature ranges. Elsevier 2018 Article PeerReviewed pdf en http://umpir.ump.edu.my/id/eprint/22124/1/Structural%2C%20optical%20and%20electrical%20characteristics%20of%20sulfur1.pdf Shaaban, Essam R. and Almohammedi, A. and Yousef, El Sayed and Ali, Gomaa A. M. and K. F., Chong and Adel, A. and Ashour, A. (2018) Structural, optical and electrical characteristics of sulfur incorporated ZnSe thin films. Optik, 164. pp. 527-537. ISSN 0030-4026 https://doi.org/10.1016/j.ijleo.2018.03.001 doi: 10.1016/j.ijleo.2018.03.001
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	Q Science (General) T Technology (General)
spellingShingle	Q Science (General) T Technology (General) Shaaban, Essam R. Almohammedi, A. Yousef, El Sayed Ali, Gomaa A. M. K. F., Chong Adel, A. Ashour, A. Structural, optical and electrical characteristics of sulfur incorporated ZnSe thin films
description	In the present study, polycrystalline materials of ZnSe1-xSx (x = 0, 0.25, 0.5, 0.75 and 1) were prepared by a conventional solid-state reaction method. Thin films of ZnSe1-xSx of about 1 μm have been produced using evaporation method. The importance of ZnSe1-xSx compound is the tunability of band gap when incorporating S into the ZnSe. Adding S at the expense of Se in ZnSe to form Zn-Se-S, which has a wider energy gap window layer to permit more light to reach the junction of solar cell. Both of optical constants (n, k) and film thickness have been determined precisely in terms of envelop method. Optical absorption spectra showed that band gap values increase with increasing S content. The electrical conductivity of ZnSe1-xSx was studied and exhibit two type of variation versus temperature. The activation energy of linear portion of the low temperature range is lower than the activation energy of linear portion of high temperature range and it increases with increasing the sulfur content in all films in both temperature ranges.
format	Article
author	Shaaban, Essam R. Almohammedi, A. Yousef, El Sayed Ali, Gomaa A. M. K. F., Chong Adel, A. Ashour, A.
author_facet	Shaaban, Essam R. Almohammedi, A. Yousef, El Sayed Ali, Gomaa A. M. K. F., Chong Adel, A. Ashour, A.
author_sort	Shaaban, Essam R.
title	Structural, optical and electrical characteristics of sulfur incorporated ZnSe thin films
title_short	Structural, optical and electrical characteristics of sulfur incorporated ZnSe thin films
title_full	Structural, optical and electrical characteristics of sulfur incorporated ZnSe thin films
title_fullStr	Structural, optical and electrical characteristics of sulfur incorporated ZnSe thin films
title_full_unstemmed	Structural, optical and electrical characteristics of sulfur incorporated ZnSe thin films
title_sort	structural, optical and electrical characteristics of sulfur incorporated znse thin films
publisher	Elsevier
publishDate	2018
url	http://umpir.ump.edu.my/id/eprint/22124/ http://umpir.ump.edu.my/id/eprint/22124/ http://umpir.ump.edu.my/id/eprint/22124/ http://umpir.ump.edu.my/id/eprint/22124/1/Structural%2C%20optical%20and%20electrical%20characteristics%20of%20sulfur1.pdf
first_indexed	2023-09-18T22:32:46Z
last_indexed	2023-09-18T22:32:46Z
_version_	1777416395864145920

Structural, optical and electrical characteristics of sulfur incorporated ZnSe thin films

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