Modelling and switching simulation of gate turn-off thyristor using finite element method

The gate turn-off (GTO) thyristor has the best voltage blocking and current conducting capabilities among all known high power semiconductor switching devices. The switching characteristics of a GTO thyristor are influenced by doping profile, material properties, lifetime and mobility of holes an...

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Main Author:	Norainon, Mohamed
Format:	Thesis
Language:	English
Published:	2010
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://umpir.ump.edu.my/id/eprint/2187/ http://umpir.ump.edu.my/id/eprint/2187/1/NORAINON_MOHAMED.PDF

id	ump-2187
recordtype	eprints
spelling	ump-21872015-03-03T07:55:05Z http://umpir.ump.edu.my/id/eprint/2187/ Modelling and switching simulation of gate turn-off thyristor using finite element method Norainon, Mohamed TK Electrical engineering. Electronics Nuclear engineering The gate turn-off (GTO) thyristor has the best voltage blocking and current conducting capabilities among all known high power semiconductor switching devices. The switching characteristics of a GTO thyristor are influenced by doping profile, material properties, lifetime and mobility of holes and electrons. Recently, most of the research on GTO thyristor is strictly experimental and has focused on their physical performances. On the other hand, the internal behaviour of GTO thyristor is not well understood. The best accuracy switching waveforms and the internal behaviour of the device can only be addressed by device simulation. Physical models (Poisson equation, drift-diffusion and current-continuity equations) of GTO thyristor are valuable for studying the internal behaviour of the device is used in the simulation. These equations are numerically solved by using finite element method. This project presents: the modelling and switching simulation of GTO thyristor device by developing a device simulation software. The software is designed by using MATLAB Graphical User Interface (GUI) development environment. The device model has been developed based on the device structure and operation. The thesis focuses on the study of a comparison between silicon and silicon carbide GTO thyristor in terms of switching time performances and efficiency at the system level. 2010-05 Thesis NonPeerReviewed application/pdf en http://umpir.ump.edu.my/id/eprint/2187/1/NORAINON_MOHAMED.PDF Norainon, Mohamed (2010) Modelling and switching simulation of gate turn-off thyristor using finite element method. Masters thesis, Universiti Malaysia Pahang.
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Malaysia Pahang
building	UMP Institutional Repository
collection	Online Access
language	English
topic	TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	TK Electrical engineering. Electronics Nuclear engineering Norainon, Mohamed Modelling and switching simulation of gate turn-off thyristor using finite element method
description	The gate turn-off (GTO) thyristor has the best voltage blocking and current conducting capabilities among all known high power semiconductor switching devices. The switching characteristics of a GTO thyristor are influenced by doping profile, material properties, lifetime and mobility of holes and electrons. Recently, most of the research on GTO thyristor is strictly experimental and has focused on their physical performances. On the other hand, the internal behaviour of GTO thyristor is not well understood. The best accuracy switching waveforms and the internal behaviour of the device can only be addressed by device simulation. Physical models (Poisson equation, drift-diffusion and current-continuity equations) of GTO thyristor are valuable for studying the internal behaviour of the device is used in the simulation. These equations are numerically solved by using finite element method. This project presents: the modelling and switching simulation of GTO thyristor device by developing a device simulation software. The software is designed by using MATLAB Graphical User Interface (GUI) development environment. The device model has been developed based on the device structure and operation. The thesis focuses on the study of a comparison between silicon and silicon carbide GTO thyristor in terms of switching time performances and efficiency at the system level.
format	Thesis
author	Norainon, Mohamed
author_facet	Norainon, Mohamed
author_sort	Norainon, Mohamed
title	Modelling and switching simulation of gate turn-off thyristor using finite element method
title_short	Modelling and switching simulation of gate turn-off thyristor using finite element method
title_full	Modelling and switching simulation of gate turn-off thyristor using finite element method
title_fullStr	Modelling and switching simulation of gate turn-off thyristor using finite element method
title_full_unstemmed	Modelling and switching simulation of gate turn-off thyristor using finite element method
title_sort	modelling and switching simulation of gate turn-off thyristor using finite element method
publishDate	2010
url	http://umpir.ump.edu.my/id/eprint/2187/ http://umpir.ump.edu.my/id/eprint/2187/1/NORAINON_MOHAMED.PDF
first_indexed	2023-09-18T21:55:44Z
last_indexed	2023-09-18T21:55:44Z
_version_	1777414066635014144

Modelling and switching simulation of gate turn-off thyristor using finite element method

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