Correlation between Electronic Structure and Electron Conductivity in MoX2 X = S, Se, Te)

Layered structure molybdenum dichalcogenides, MoX2 (X = S, Se, and Te) are in focus as reversible charge storage electrode for pseudocapacitor applications. Correlation between number of layer and bandgap of the materials has been established by previous researchers. The correlation would reveal a c...

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Main Author: Saifful Kamaluddin, Muzakir
Format: Conference or Workshop Item
Language:English
English
Published: 2016
Subjects:
Online Access:http://umpir.ump.edu.my/id/eprint/15602/
http://umpir.ump.edu.my/id/eprint/15602/1/SKM%20AMC%202016%20V2.pptx
http://umpir.ump.edu.my/id/eprint/15602/2/SKM%20AMC%202016%20V2.pdf
id ump-15602
recordtype eprints
spelling ump-156022018-10-03T08:52:08Z http://umpir.ump.edu.my/id/eprint/15602/ Correlation between Electronic Structure and Electron Conductivity in MoX2 X = S, Se, Te) Saifful Kamaluddin, Muzakir QC Physics Layered structure molybdenum dichalcogenides, MoX2 (X = S, Se, and Te) are in focus as reversible charge storage electrode for pseudocapacitor applications. Correlation between number of layer and bandgap of the materials has been established by previous researchers. The correlation would reveal a connection between the bandgap and charge storage properties i.e., amount of charges that could be stored, and speed of storage or dissociation. In this work, fundamental parameters viz., (i) size-offset between a monolayer and exciton Bohr radius of MoX2 and (ii) ground and excited state electron density have been studied. We have identified realistic monolayer models of MoX2 using quantum chemical calculations which explain a correlation between size-offset and charge storage properties. We conclude that as the size-offset decreases, the higher possibility of wave functions overlap between the excited state, and ground state electrons; therefore the higher the electron mobility, and conductivity of the MoX2 would be. 2016-11-29 Conference or Workshop Item PeerReviewed application/vnd.ms-powerpoint en http://umpir.ump.edu.my/id/eprint/15602/1/SKM%20AMC%202016%20V2.pptx application/pdf en http://umpir.ump.edu.my/id/eprint/15602/2/SKM%20AMC%202016%20V2.pdf Saifful Kamaluddin, Muzakir (2016) Correlation between Electronic Structure and Electron Conductivity in MoX2 X = S, Se, Te). In: 3rd Advanced Materials Conference 2016, 28 - 29 November 2016 , Bayview Hotel, Langkawi, Kedah. pp. 1-13.. (In Press)
repository_type Digital Repository
institution_category Local University
institution Universiti Malaysia Pahang
building UMP Institutional Repository
collection Online Access
language English
English
topic QC Physics
spellingShingle QC Physics
Saifful Kamaluddin, Muzakir
Correlation between Electronic Structure and Electron Conductivity in MoX2 X = S, Se, Te)
description Layered structure molybdenum dichalcogenides, MoX2 (X = S, Se, and Te) are in focus as reversible charge storage electrode for pseudocapacitor applications. Correlation between number of layer and bandgap of the materials has been established by previous researchers. The correlation would reveal a connection between the bandgap and charge storage properties i.e., amount of charges that could be stored, and speed of storage or dissociation. In this work, fundamental parameters viz., (i) size-offset between a monolayer and exciton Bohr radius of MoX2 and (ii) ground and excited state electron density have been studied. We have identified realistic monolayer models of MoX2 using quantum chemical calculations which explain a correlation between size-offset and charge storage properties. We conclude that as the size-offset decreases, the higher possibility of wave functions overlap between the excited state, and ground state electrons; therefore the higher the electron mobility, and conductivity of the MoX2 would be.
format Conference or Workshop Item
author Saifful Kamaluddin, Muzakir
author_facet Saifful Kamaluddin, Muzakir
author_sort Saifful Kamaluddin, Muzakir
title Correlation between Electronic Structure and Electron Conductivity in MoX2 X = S, Se, Te)
title_short Correlation between Electronic Structure and Electron Conductivity in MoX2 X = S, Se, Te)
title_full Correlation between Electronic Structure and Electron Conductivity in MoX2 X = S, Se, Te)
title_fullStr Correlation between Electronic Structure and Electron Conductivity in MoX2 X = S, Se, Te)
title_full_unstemmed Correlation between Electronic Structure and Electron Conductivity in MoX2 X = S, Se, Te)
title_sort correlation between electronic structure and electron conductivity in mox2 x = s, se, te)
publishDate 2016
url http://umpir.ump.edu.my/id/eprint/15602/
http://umpir.ump.edu.my/id/eprint/15602/1/SKM%20AMC%202016%20V2.pptx
http://umpir.ump.edu.my/id/eprint/15602/2/SKM%20AMC%202016%20V2.pdf
first_indexed 2023-09-18T22:20:27Z
last_indexed 2023-09-18T22:20:27Z
_version_ 1777415620786126848