Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs

In this work, the emission efficiency of InxGa1-xN based light emitting diodes (LEDs) had been numerically investigated with the variation of the number of quantum well. From our calculation, we found that non-uniformity of carriers distribution (especially electron) in the wells leads to serious in...

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Main Authors: Zainal, N., Azimah, E., Hassan, Z., Abu Hassan, H., Hashim, M.R.
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2014
Online Access:http://journalarticle.ukm.my/7819/
http://journalarticle.ukm.my/7819/
http://journalarticle.ukm.my/7819/1/13_N._Zainal.pdf
id ukm-7819
recordtype eprints
spelling ukm-78192016-12-14T06:45:18Z http://journalarticle.ukm.my/7819/ Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs Zainal, N. Azimah, E. Hassan, Z. Abu Hassan, H. Hashim, M.R. In this work, the emission efficiency of InxGa1-xN based light emitting diodes (LEDs) had been numerically investigated with the variation of the number of quantum well. From our calculation, we found that non-uniformity of carriers distribution (especially electron) in the wells leads to serious inhomogeneity of radiative recombination distribution that would degrade the efficiency of the LED with more wells. However, the problem was minimized when the selected quantum barriers were doped with a reasonable doping level. Comparison with other reported experimental works were also included. At the end of this work, we proposed several types of preferable LEDs designs with optimum structural parameters. Universiti Kebangsaan Malaysia 2014-10 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/7819/1/13_N._Zainal.pdf Zainal, N. and Azimah, E. and Hassan, Z. and Abu Hassan, H. and Hashim, M.R. (2014) Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs. Sains Malaysiana, 43 (10). pp. 1557-1564. ISSN 0126-6039 http://www.ukm.my/jsm/
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language English
description In this work, the emission efficiency of InxGa1-xN based light emitting diodes (LEDs) had been numerically investigated with the variation of the number of quantum well. From our calculation, we found that non-uniformity of carriers distribution (especially electron) in the wells leads to serious inhomogeneity of radiative recombination distribution that would degrade the efficiency of the LED with more wells. However, the problem was minimized when the selected quantum barriers were doped with a reasonable doping level. Comparison with other reported experimental works were also included. At the end of this work, we proposed several types of preferable LEDs designs with optimum structural parameters.
format Article
author Zainal, N.
Azimah, E.
Hassan, Z.
Abu Hassan, H.
Hashim, M.R.
spellingShingle Zainal, N.
Azimah, E.
Hassan, Z.
Abu Hassan, H.
Hashim, M.R.
Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
author_facet Zainal, N.
Azimah, E.
Hassan, Z.
Abu Hassan, H.
Hashim, M.R.
author_sort Zainal, N.
title Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
title_short Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
title_full Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
title_fullStr Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
title_full_unstemmed Simulation on the roles of the number of quantum well and doping in InxGa1-xN Multiple Quantum Wells LEDs
title_sort simulation on the roles of the number of quantum well and doping in inxga1-xn multiple quantum wells leds
publisher Universiti Kebangsaan Malaysia
publishDate 2014
url http://journalarticle.ukm.my/7819/
http://journalarticle.ukm.my/7819/
http://journalarticle.ukm.my/7819/1/13_N._Zainal.pdf
first_indexed 2023-09-18T19:50:41Z
last_indexed 2023-09-18T19:50:41Z
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