Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode

In this research an atomic force microscopy (AFM) study on self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) was performed. Surface morphology of self-assembled In0.5Ga0.5As QDs changes with different growth time. Increasing growth time increased the dots size and decreased the dots density. In ad...

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Main Authors:	Didik Aryanto, Zulkafli Othaman, Abd. Khamim Ismail, Amira Saryati Ameruddin
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2010
Online Access:	http://journalarticle.ukm.my/7448/ http://journalarticle.ukm.my/7448/ http://journalarticle.ukm.my/7448/1/26_Ayiesah.pdf

id	ukm-7448
recordtype	eprints
spelling	ukm-74482016-12-14T06:44:07Z http://journalarticle.ukm.my/7448/ Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode Didik Aryanto, Zulkafli Othaman, Abd. Khamim Ismail, Amira Saryati Ameruddin, In this research an atomic force microscopy (AFM) study on self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) was performed. Surface morphology of self-assembled In0.5Ga0.5As QDs changes with different growth time. Increasing growth time increased the dots size and decreased the dots density. In addiditon, self-assembled In0.5Ga0.5As QDs was grown on In0.1Ga0.9As underlying layer with different after-growth AsH3 flow time during cooling-down. The underlying layer caused lattice strain relaxation in the QDs on the surface. Increasing the period of AsH3 flow during cooling-down reduced the diameter of the dots and increased the density. The migration of groups III species in the growth of In0.5Ga0.5As/GaAs system was influenced by AsH3 flow during cooling-down period. This was due to the increase in surface population of active arsenic species. Underlying layer and the period of AsH3 flow during cooling-down are the two key factors in the fabrication of small and dense In0.5Ga0.5As QDs. Universiti Kebangsaan Malaysia 2010-12 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/7448/1/26_Ayiesah.pdf Didik Aryanto, and Zulkafli Othaman, and Abd. Khamim Ismail, and Amira Saryati Ameruddin, (2010) Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode. Sains Malaysiana, 39 (6). pp. 1025-1030. ISSN 0126-6039 http://www.ukm.my/jsm/english_journals/vol39num6_2010/contentsVol39num6_2010.html
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	In this research an atomic force microscopy (AFM) study on self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) was performed. Surface morphology of self-assembled In0.5Ga0.5As QDs changes with different growth time. Increasing growth time increased the dots size and decreased the dots density. In addiditon, self-assembled In0.5Ga0.5As QDs was grown on In0.1Ga0.9As underlying layer with different after-growth AsH3 flow time during cooling-down. The underlying layer caused lattice strain relaxation in the QDs on the surface. Increasing the period of AsH3 flow during cooling-down reduced the diameter of the dots and increased the density. The migration of groups III species in the growth of In0.5Ga0.5As/GaAs system was influenced by AsH3 flow during cooling-down period. This was due to the increase in surface population of active arsenic species. Underlying layer and the period of AsH3 flow during cooling-down are the two key factors in the fabrication of small and dense In0.5Ga0.5As QDs.
format	Article
author	Didik Aryanto, Zulkafli Othaman, Abd. Khamim Ismail, Amira Saryati Ameruddin,
spellingShingle	Didik Aryanto, Zulkafli Othaman, Abd. Khamim Ismail, Amira Saryati Ameruddin, Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode
author_facet	Didik Aryanto, Zulkafli Othaman, Abd. Khamim Ismail, Amira Saryati Ameruddin,
author_sort	Didik Aryanto,
title	Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode
title_short	Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode
title_full	Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode
title_fullStr	Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode
title_full_unstemmed	Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode
title_sort	surface morphology of in0.5ga0.5 quantum dots grown using stranski-krastanov growth mode
publisher	Universiti Kebangsaan Malaysia
publishDate	2010
url	http://journalarticle.ukm.my/7448/ http://journalarticle.ukm.my/7448/ http://journalarticle.ukm.my/7448/1/26_Ayiesah.pdf
first_indexed	2023-09-18T19:49:45Z
last_indexed	2023-09-18T19:49:45Z
_version_	1777406139738095616

Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode

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