Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature

The electronic band structure, density of states (DOS) and carrier concentration of a (13,13) metallic and a (13,0) semiconducting Single Wall Carbon Nanotube (SWCNT) have been estimated and simulated by using the Fermi-Dirac distribution function. The energy dispersion E(k) relation for metallic SW...

Full description

Bibliographic Details
Main Authors:	J. Karamdel, M. Damghanian, F. Razaghian, C.F. Dee, B. Yeop Majlis
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2010
Online Access:	http://journalarticle.ukm.my/7380/ http://journalarticle.ukm.my/7380/ http://journalarticle.ukm.my/7380/1/01_Md_Yeaminhossain.pdf

id	ukm-7380
recordtype	eprints
spelling	ukm-73802016-12-14T06:43:54Z http://journalarticle.ukm.my/7380/ Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature J. Karamdel, M. Damghanian, F. Razaghian, C.F. Dee, B. Yeop Majlis, The electronic band structure, density of states (DOS) and carrier concentration of a (13,13) metallic and a (13,0) semiconducting Single Wall Carbon Nanotube (SWCNT) have been estimated and simulated by using the Fermi-Dirac distribution function. The energy dispersion E(k) relation for metallic SWCNT near the minimum energy is linear and the Fermi level was independent of temperature (T). On the other hand for semiconducting SWCNT the E(k) relation is parabolic. The normalized Fermi-Energy (EF – EC) in the nondegenerate regime is a weak (logarithmic) function of carrier concentration and varies linearly with T. In the degenerate condition, the Fermi level was independent of T and was a strong function of carrier concentration. Universiti Kebangsaan Malaysia 2010-08 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/7380/1/01_Md_Yeaminhossain.pdf J. Karamdel, and M. Damghanian, and F. Razaghian, and C.F. Dee, and B. Yeop Majlis, (2010) Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature. Sains Malaysiana, 39 (4). pp. 615-620. ISSN 0126-6039 http://www.ukm.my/jsm/english_journals/vol39num4_2010/contentsVol39num4_2010.html
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	The electronic band structure, density of states (DOS) and carrier concentration of a (13,13) metallic and a (13,0) semiconducting Single Wall Carbon Nanotube (SWCNT) have been estimated and simulated by using the Fermi-Dirac distribution function. The energy dispersion E(k) relation for metallic SWCNT near the minimum energy is linear and the Fermi level was independent of temperature (T). On the other hand for semiconducting SWCNT the E(k) relation is parabolic. The normalized Fermi-Energy (EF – EC) in the nondegenerate regime is a weak (logarithmic) function of carrier concentration and varies linearly with T. In the degenerate condition, the Fermi level was independent of T and was a strong function of carrier concentration.
format	Article
author	J. Karamdel, M. Damghanian, F. Razaghian, C.F. Dee, B. Yeop Majlis,
spellingShingle	J. Karamdel, M. Damghanian, F. Razaghian, C.F. Dee, B. Yeop Majlis, Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
author_facet	J. Karamdel, M. Damghanian, F. Razaghian, C.F. Dee, B. Yeop Majlis,
author_sort	J. Karamdel,
title	Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
title_short	Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
title_full	Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
title_fullStr	Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
title_full_unstemmed	Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
title_sort	dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
publisher	Universiti Kebangsaan Malaysia
publishDate	2010
url	http://journalarticle.ukm.my/7380/ http://journalarticle.ukm.my/7380/ http://journalarticle.ukm.my/7380/1/01_Md_Yeaminhossain.pdf
first_indexed	2023-09-18T19:49:33Z
last_indexed	2023-09-18T19:49:33Z
_version_	1777406126972731392

Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature

Similar Items