MEMS very low capacitive pressure sensor based on CMOS process

The CMOS standard process with advantage of simplicity in term of design and fabrication process compatibility has triggered the invention of MEMS very low capacitive pressure sensor, (MEMS-VLCPS). In this paper the development of the whole structure of MEMS-VLCPS that involves the design simulation...

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Main Authors:	Muhamad Ramdzan Buyong, Norazreen Abd Aziz, Burhanuddin Yeop Majlis
Format:	Article
Language:	English
Published:	Universiti Kebangsaan Malaysia 2011
Online Access:	http://journalarticle.ukm.my/707/ http://journalarticle.ukm.my/707/ http://journalarticle.ukm.my/707/1/11_Muhammad_Ramdzan.pdf

id	ukm-707
recordtype	eprints
spelling	ukm-7072016-12-14T06:27:57Z http://journalarticle.ukm.my/707/ MEMS very low capacitive pressure sensor based on CMOS process Muhamad Ramdzan Buyong, Norazreen Abd Aziz, Burhanuddin Yeop Majlis, The CMOS standard process with advantage of simplicity in term of design and fabrication process compatibility has triggered the invention of MEMS very low capacitive pressure sensor, (MEMS-VLCPS). In this paper the development of the whole structure of MEMS-VLCPS that involves the design simulation, fabrication and testing is described. The novelty of this work lies in the design and fabrication process itself. A new technique in fabricating thin sensor membrane of VLCPS using seal-off techniques is also presented. The physical structure of the membrane consists of parallel plate. The top plate acts as the flexible electrode membrane and the bottom plate acts as the counter electrode membrane. Both plates are separated by absolute air gap with fixed end at both sides. As a result, it was found that the etch-opening holes of 0.8 μm and seal-off thickness of 4000 Å gave the optimum sealing surface. The percentage of relative capacitance change is extracted from the reference capacitance measurement. Air gap thickness of 0.3 μm gives the highest percentage of PRCC showing that smaller air gap thickness provides a larger change in capacitance value Universiti Kebangsaan Malaysia 2011-03 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/707/1/11_Muhammad_Ramdzan.pdf Muhamad Ramdzan Buyong, and Norazreen Abd Aziz, and Burhanuddin Yeop Majlis, (2011) MEMS very low capacitive pressure sensor based on CMOS process. Sains Malaysiana, 40 (3). pp. 259-266. ISSN 0126-6039 http://www.ukm.my/jsm
repository_type	Digital Repository
institution_category	Local University
institution	Universiti Kebangasaan Malaysia
building	UKM Institutional Repository
collection	Online Access
language	English
description	The CMOS standard process with advantage of simplicity in term of design and fabrication process compatibility has triggered the invention of MEMS very low capacitive pressure sensor, (MEMS-VLCPS). In this paper the development of the whole structure of MEMS-VLCPS that involves the design simulation, fabrication and testing is described. The novelty of this work lies in the design and fabrication process itself. A new technique in fabricating thin sensor membrane of VLCPS using seal-off techniques is also presented. The physical structure of the membrane consists of parallel plate. The top plate acts as the flexible electrode membrane and the bottom plate acts as the counter electrode membrane. Both plates are separated by absolute air gap with fixed end at both sides. As a result, it was found that the etch-opening holes of 0.8 μm and seal-off thickness of 4000 Å gave the optimum sealing surface. The percentage of relative capacitance change is extracted from the reference capacitance measurement. Air gap thickness of 0.3 μm gives the highest percentage of PRCC showing that smaller air gap thickness provides a larger change in capacitance value
format	Article
author	Muhamad Ramdzan Buyong, Norazreen Abd Aziz, Burhanuddin Yeop Majlis,
spellingShingle	Muhamad Ramdzan Buyong, Norazreen Abd Aziz, Burhanuddin Yeop Majlis, MEMS very low capacitive pressure sensor based on CMOS process
author_facet	Muhamad Ramdzan Buyong, Norazreen Abd Aziz, Burhanuddin Yeop Majlis,
author_sort	Muhamad Ramdzan Buyong,
title	MEMS very low capacitive pressure sensor based on CMOS process
title_short	MEMS very low capacitive pressure sensor based on CMOS process
title_full	MEMS very low capacitive pressure sensor based on CMOS process
title_fullStr	MEMS very low capacitive pressure sensor based on CMOS process
title_full_unstemmed	MEMS very low capacitive pressure sensor based on CMOS process
title_sort	mems very low capacitive pressure sensor based on cmos process
publisher	Universiti Kebangsaan Malaysia
publishDate	2011
url	http://journalarticle.ukm.my/707/ http://journalarticle.ukm.my/707/ http://journalarticle.ukm.my/707/1/11_Muhammad_Ramdzan.pdf
first_indexed	2023-09-18T19:31:34Z
last_indexed	2023-09-18T19:31:34Z
_version_	1777404995751116800

MEMS very low capacitive pressure sensor based on CMOS process

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